Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
Yanagisawa Takuya, Yamamoto Yoshiyuki, Matsumoto Naoki, Seki Yuki, Nakahata Seiji, Mikami Hidenori, Ishibashi Keiji, Hiromura Yuki, Yoshizumi Yusuke, Nakanishi Fumitake, Uematsu Koji, Hachigo Akihiro
Year of Publication 13.03.2018
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Year of Publication 13.03.2018
Patent
PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL
MIZUHARA, NAHO, MIYANAGA, MICHIMASA, OKAHISA, TAKUJI, TANIZAKI, KEISUKE, UEMATSU, KOJI, NAKAHATA, HIDEAKI, NAKAHATA, SEIJI
Year of Publication 20.01.2016
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Year of Publication 20.01.2016
Patent