Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density
Ebihara, Yasuhiro, Uehara, Junichi, Ichimura, Aiko, Mitani, Shuhei, Noborio, Masato, Takeuchi, Yuichi, Tsuruta, Kazuhiro
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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