GaN Gate Injection Transistor with integrated Si Schottky barrier diode for highly efficient DC-DC converters
Morita, T., Ujita, S., Umeda, H., Kinoshita, Y., Tamura, S., Anda, Y., Ueda, T., Tanaka, T.
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
Get full text
Conference Proceeding
Field effect transistor
TSURUMI NAOHIRO, ANDA YOSHIHARU, KAJITANI RYO, NAKAZAWA SATOSHI, UEDA TETSUZO
Year of Publication 18.11.2014
Get full text
Year of Publication 18.11.2014
Patent