GaN-on-Si Power Technology: Devices and Applications
Chen, Kevin J., Haberlen, Oliver, Lidow, Alex, Chun Lin Tsai, Ueda, Tetsuzo, Uemoto, Yasuhiro, Yifeng Wu
Published in IEEE transactions on electron devices (01.03.2017)
Published in IEEE transactions on electron devices (01.03.2017)
Get full text
Journal Article
Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient
Yamada, Takahiro, Ito, Joyo, Asahara, Ryohei, Watanabe, Kenta, Nozaki, Mikito, Nakazawa, Satoshi, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Journal of applied physics (21.01.2017)
Published in Journal of applied physics (21.01.2017)
Get full text
Journal Article
GaN transistors on Si for switching and high-frequency applications
Ueda, Tetsuzo, Ishida, Masahiro, Tanaka, Tsuyoshi, Ueda, Daisuke
Published in Japanese Journal of Applied Physics (01.10.2014)
Published in Japanese Journal of Applied Physics (01.10.2014)
Get full text
Journal Article
Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., Ueda, D.
Published in IEEE transactions on electron devices (01.12.2007)
Published in IEEE transactions on electron devices (01.12.2007)
Get full text
Journal Article
Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire
Kuroda, Masayuki, Ishida, Hidetoshi, Ueda, Tetsuzo, Tanaka, Tsuyoshi
Published in Journal of applied physics (01.11.2007)
Published in Journal of applied physics (01.11.2007)
Get full text
Journal Article
Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain
Kaneko, Saichiro, Kuroda, Masayuki, Yanagihara, Manabu, Ikoshi, Ayanori, Okita, Hideyuki, Morita, Tatsuo, Tanaka, Kenichiro, Hikita, Masahiro, Uemoto, Yasuhiro, Takahashi, Satoru, Ueda, Tetsuzo
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
Get full text
Conference Proceeding
Recent advances in GaN transistors for future emerging applications
Yanagihara, Manabu, Uemoto, Yasuhiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi, Ueda, Daisuke
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
Get full text
Journal Article
Conference Proceeding
Separation of Thin GaN from Sapphire by Laser Lift-Off Technique
Ueda, Tetsuzo, Ishida, Masahiro, Yuri, Masaaki
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
Get full text
Journal Article
Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C
Ishii, Hajime, Ueno, Hiroaki, Ueda, Tetsuzo, Endoh, Tetsuo
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties
Nozaki, Mikito, Watanabe, Kenta, Yamada, Takahiro, Shih, Hong-An, Nakazawa, Satoshi, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors
Nakazawa, Satoshi, Shih, Hong-An, Tsurumi, Naohiro, Anda, Yoshiharu, Hatsuda, Tsuguyasu, Ueda, Tetsuzo, Kimoto, Tsunenobu, Hashizume, Tamotsu
Published in Japanese Journal of Applied Physics (01.03.2019)
Published in Japanese Journal of Applied Physics (01.03.2019)
Get full text
Journal Article
SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors
Watanabe, Kenta, Terashima, Daiki, Nozaki, Mikito, Yamada, Takahiro, Nakazawa, Satoshi, Ishida, Masahiro, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions
Nozaki, Mikito, Ito, Joyo, Asahara, Ryohei, Nakazawa, Satoshi, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Applied physics express (01.10.2016)
Published in Applied physics express (01.10.2016)
Get full text
Journal Article
99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors
Morita, T, Tamura, S, Anda, Y, Ishida, M, Uemoto, Y, Ueda, T, Tanaka, T, Ueda, D
Published in 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2011)
Published in 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2011)
Get full text
Conference Proceeding
Separation of Thin GaN from Sapphire by Laser Lift-Off Technique
Ueda, Tetsuzo, Ishida, Masahiro, Yuri, Masaaki
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
Get full text
Journal Article