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Published in IEEE transactions on electron devices (01.05.2002)
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Published in Applied physics express (01.04.2014)
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De Salvo, Barbara, Lee, Tze-Liang
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
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Conference Proceeding
Low interface trap density Al 2 O 3 /In 0.53 Ga 0.47 As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate
Lin, Yueh-Chin, Huang, Mao-Lin, Chen, Chen-Yu, Chen, Meng-Ku, Lin, Hung-Ta, Tsai, Pang-Yan, Lin, Chun-Hsiung, Chang, Hui-Cheng, Lee, Tze-Liang, Lo, Chia-Chiung, Jang, Syun-Ming, Diaz, Carlos H., Hwang, He-Yong, Sun, Yuan-Chen, Chang, Edward Yi
Published in Applied physics express (01.04.2014)
Published in Applied physics express (01.04.2014)
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