Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing
Kachurin, G.A., Tyschenko, I.E., Zhuravlev, K.S., Pazdnikov, N.A., Volodin, V.A., Gutakovsky, A.K., Leier, A.F., Skorupa, W., Yankov, R.A.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.02.1997)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.02.1997)
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Journal Article
Hafnia and alumina stacks as UTBOXs in silicon-on insulator
Popov, V.P., Antonov, V.A., Gutakovskiy, A.K., Tyschenko, I.E., Vdovin, V.I., Miakonkikh, A.V., Rudenko, K.V.
Published in Solid-state electronics (01.06.2020)
Published in Solid-state electronics (01.06.2020)
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Journal Article
Ferroelectric properties of SOS and SOI pseudo-MOSFETs with HfO2 interlayers
Popov, V.P., Antonov, V.A., Ilnitsky, M.A., Tyschenko, I.E., Vdovin, V.I., Miakonkikh, A.V., Rudenko, K.V.
Published in Solid-state electronics (01.09.2019)
Published in Solid-state electronics (01.09.2019)
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Journal Article
Specific Features of the Ion-Beam Synthesis of Ge Nanocrystals in Si[O.sub.2] Thin Films
Tyschenko, I.E, Cherkov, A.G, Volodin, V.A, Voelskow, M
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2017)
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Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers
Tyschenko, I.E., Volodin, V.A., Cherkov, A.G., Stoffel, M., Rinnert, H., Vergnat, M., Popov, V.P.
Published in Journal of luminescence (01.12.2018)
Published in Journal of luminescence (01.12.2018)
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Journal Article
Blue and violet photoluminescence from high-dose Si +- and Ge +-implanted silicon dioxide layers
Rebohle, L., Tyschenko, I.E., Fröb, H., Leo, K., Yankov, R.A., von Borany, J., Kachurin, G.A., Skorupa, W.
Published in Microelectronic engineering (01.06.1997)
Published in Microelectronic engineering (01.06.1997)
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Journal Article
Ion-beam synthesis of InSb nanocrystals in the buried Si[O.sub.2] layer of a silicon-on-insulator structure
Tyschenko, I.E, Voelskow, M, Cherkov, A.G, Popov, V.P
Published in Semiconductors (Woodbury, N.Y.) (01.09.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2014)
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Journal Article
Anodization of nanoscale Si layers in silicon-on-insulator structures
Antonov, V. A., Spesivtsev, E. V., Tyschenko, I. E.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2011)
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Journal Article
Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure
Tyschenko, I.E., Voelskow, M., Cherkov, A.G., Popov, V.P.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.2009)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.2009)
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Journal Article
Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions
Tyschenko, I. E., Volodin, V. A., Voelskow, M., Cherkov, A. G., Popov, V. P.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2013)
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Journal Article
Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers
Tyschenko, I.E., Voelskow, M., Cherkov, A.G., Popov, V.P.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.2009)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.05.2009)
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