A Fluorescence Resonance Energy Transfer-Derived Structure of a Quantum Dot-Protein Bioconjugate Nanoassembly
Medintz, I. L., Konnert, J. H., Clapp, A. R., Stanish, I., Twigg, M. E., Mattoussi, H., Mauro, J. M., Deschamps, J. R., Karle, Jerome
Published in Proceedings of the National Academy of Sciences - PNAS (29.06.2004)
Published in Proceedings of the National Academy of Sciences - PNAS (29.06.2004)
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Journal Article
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
Koleske, D.D, Wickenden, A.E, Henry, R.L, Twigg, M.E
Published in Journal of crystal growth (01.07.2002)
Published in Journal of crystal growth (01.07.2002)
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Journal Article
GaN decomposition in H 2 and N 2 at MOVPE temperatures and pressures
Koleske, D.D., Wickenden, A.E., Henry, R.L., Culbertson, J.C., Twigg, M.E.
Published in Journal of crystal growth (01.03.2001)
Published in Journal of crystal growth (01.03.2001)
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Journal Article
GaN vertical and lateral polarity heterostructures on GaN substrates
Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.
Published in Journal of crystal growth (01.10.2011)
Published in Journal of crystal growth (01.10.2011)
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Journal Article
Resistivity control in unintentionally doped GaN films grown by MOCVD
Wickenden, A.E., Koleske, D.D., Henry, R.L., Twigg, M.E., Fatemi, M.
Published in Journal of crystal growth (02.01.2004)
Published in Journal of crystal growth (02.01.2004)
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Journal Article
MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates
Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.
Published in Journal of crystal growth (01.01.2006)
Published in Journal of crystal growth (01.01.2006)
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Journal Article
Conference Proceeding
Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs
Warner, Jeffrey H., Inguimbert, Christophe, Twigg, Mark E., Messenger, Scott R., Walters, Robert J., Romero, Manuel J., Summers, Geoffrey P.
Published in IEEE transactions on nuclear science (01.12.2008)
Published in IEEE transactions on nuclear science (01.12.2008)
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Journal Article
Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides
Hobart, K. D., Kub, F. J., Fatemi, M., Twigg, M. E., Thompson, P. E., Kuan, T. S., Inoki, C. K.
Published in Journal of electronic materials (01.07.2000)
Published in Journal of electronic materials (01.07.2000)
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Journal Article
Structure and Orientation Determination of Metal-Oxide Nanostructures by Electron Backscatter Diffraction
Picard, YN, Mazeina, L, Maximenko, S, Freitas, J, Prokes, S, Twigg, ME
Published in Microscopy and microanalysis (01.07.2009)
Published in Microscopy and microanalysis (01.07.2009)
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Journal Article
Growth and characterization of III-N bulk crystals
Frazier, R. M., Feigelson, B. N., Twigg, M. E., Murthy, M., Freitas, J. A.
Published in Journal of materials science. Materials in electronics (01.09.2008)
Published in Journal of materials science. Materials in electronics (01.09.2008)
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Journal Article
Conference Proceeding
Investigation of three-step epilayer growth approach of GaN films to minimize compensation
EDDY, C. R, HOLM, R. T, HENRY, R. L, CULBERTSON, J. C, TWIGG, M. E
Published in Journal of electronic materials (01.09.2005)
Published in Journal of electronic materials (01.09.2005)
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Journal Article
Using Multiple Contrast Mechanisms via Forescatter Electron Channeling Contrast Imaging to Resolve the Burgers Vector of GaN Threading Dislocations
Picard, YN, Twigg, ME, Caldwell, JD, Jr, CR Eddy, Mastro, MA, Holm, RT
Published in Microscopy and microanalysis (01.07.2009)
Published in Microscopy and microanalysis (01.07.2009)
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Journal Article
Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT
Mastro, M.A., Eddy, C.R., Bassim, N.D., Twigg, M.E., Edwards, A., Henry, R.L., Holm, R.H.
Published in Solid-state electronics (01.02.2005)
Published in Solid-state electronics (01.02.2005)
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Journal Article
The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys
Wickenden, A. E., Koleske, D. D., Henry, R. L., Gorman, R. J., Twigg, M. E., Fatemi, M., Freitas, J. A., Moore, W. J.
Published in Journal of electronic materials (01.01.2000)
Published in Journal of electronic materials (01.01.2000)
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Journal Article
Analysis of growth on 75 mm Si (100) wafers by molecular beam epitaxy using in vacuo scanning tunneling microscopy
Jernigan, Glenn G, Thompson, Phillip E, Twigg, Mark E
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Journal Article
Conference Proceeding
Planar defects in 4H-SiC PiN diodes
Twigg, M. E., Stahlbush, R. E., Irvine, K. G., Sumakeris, J. J., Chow, T. P., Lossee, P. A., Zhu, L.
Published in Journal of electronic materials (01.04.2005)
Published in Journal of electronic materials (01.04.2005)
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Journal Article