High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices
Singh, N., Agarwal, A., Bera, L.K., Liow, T.Y., Yang, R., Rustagi, S.C., Tung, C.H., Kumar, R., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Published in IEEE electron device letters (01.05.2006)
Published in IEEE electron device letters (01.05.2006)
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N-type Schottky barrier source/drain MOSFET using ytterbium silicide
Shiyang Zhu, Jingde Chen, Li, M.-F., Lee, S.J., Singh, J., Zhu, C.X., Du, A., Tung, C.H., Chin, A., Kwong, D.L.
Published in IEEE electron device letters (01.08.2004)
Published in IEEE electron device letters (01.08.2004)
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Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
Yu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Chunxiang Zhu, Tung, C.H., Du, A.Y., Wang, W.D., Chi, D.Z., Kwong, D.-L.
Published in IEEE electron device letters (01.04.2003)
Published in IEEE electron device letters (01.04.2003)
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Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode
Shiyang Zhu, Yu, H.Y., Whang, S.J., Chen, J.H., Chen Shen, Chunxiang Zhu, Lee, S.J., Li, M.F., Chan, D.S.H., Yoo, W.J., Du, A., Tung, C.H., Singh, J., Chin, A., Kwong, D.L.
Published in IEEE electron device letters (01.05.2004)
Published in IEEE electron device letters (01.05.2004)
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Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique
Jiang, Y., Singh, N., Liow, T.Y., Loh, W.Y., Balakumar, S., Hoe, K.M., Tung, C.H., Bliznetsov, V., Rustagi, S.C., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
Published in IEEE electron device letters (01.06.2008)
Published in IEEE electron device letters (01.06.2008)
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Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs
Tung, C.H., Pey, K.L., Lin, W.H., Radhakrishnan, M.K.
Published in IEEE electron device letters (01.09.2002)
Published in IEEE electron device letters (01.09.2002)
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Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications
Ren, C., Chan, D.S.H., Li, M.-F., Loh, W.-Y., Balakumar, S., Tung, C.H., Balasubramanian, N., Kwong, D.-L.
Published in IEEE transactions on electron devices (01.08.2006)
Published in IEEE transactions on electron devices (01.08.2006)
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Percolation resistance evolution during progressive breakdown in narrow MOSFETs
Lo, V.L., Pey, K.L., Tung, C.H., Ang, D.S., Foo, T.S., Tang, L.J.
Published in IEEE electron device letters (01.05.2006)
Published in IEEE electron device letters (01.05.2006)
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Photophysical properties and TPA optical limiting of two new organic compounds
Lei, H, Wang, H.Z, Wei, Z.C, Tang, X.J, Wu, L.Z, Tung, C.H, Zhou, G.Y
Published in Chemical physics letters (01.01.2001)
Published in Chemical physics letters (01.01.2001)
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Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS Process
Ren, C., Chan, D.S.H., Loh, W.Y., Balakumar, S., Du, A.Y., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.-L.
Published in IEEE electron device letters (01.10.2006)
Published in IEEE electron device letters (01.10.2006)
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Journal Article
A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator
Bera, L.K., Mukherjee-Roy, M., Abidha, B., Agarwal, A., Loh, W.Y., Tung, C.H., Kumar, R., Trigg, A.D., Foo, Y.L., Tripathy, S., Lo, G.Q., Balasubramanian, N., Kwong, D.L.
Published in IEEE electron device letters (01.05.2006)
Published in IEEE electron device letters (01.05.2006)
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Multiple-pulse laser thermal annealing for the formation of Co-silicided junction
Lee, P.S., Pey, K.L., Chow, F.L., Tang, L.J., Tung, C.H., Wang, X.C., Lim, G.C.
Published in IEEE electron device letters (01.04.2006)
Published in IEEE electron device letters (01.04.2006)
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Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology
Rong Yang, Loh, W.Y., Yu, M.B., Yong-Zhong Xiong, Choy, S.F., Jiang, Y., Chan, D.S.H., Lim, Y.F., Bera, L.K., Wong, L.Y., Li, W.H., Du, A.Y., Tung, C.H., Hoe, K.M., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Published in IEEE electron device letters (01.10.2006)
Published in IEEE electron device letters (01.10.2006)
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Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM
Pey, K.L, Tung, C.H., Radhakrishnan, M.K., Tang, L.J., Sun, Y., Wang, X.D., Lin, W.H.
Published in Microelectronics and reliability (01.09.2003)
Published in Microelectronics and reliability (01.09.2003)
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Thermally robust TaTb/sub x/N metal gate electrode for n-MOSFETs applications
Ren, C., Yu, H.Y., Wang, X.P., Ma, H.H.H., Chan, D.S.H., Li, M.-F., Yee-Chia Yeo, Tung, C.H., Balasubramanian, N., Huan, A.C.H., Pan, J.S., Kwong, D.-L.
Published in IEEE electron device letters (01.02.2005)
Published in IEEE electron device letters (01.02.2005)
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Journal Article
Robust High-Quality HfN–>tex<$hbox HfO_2$>/tex<Gate Stack for Advanced MOS Device Applications
Yu, H.Y., Kang, J.F., Ren, C., Chen, J.D., Hou, Y.T., Shen, C., Li, M.F., Chan, D.S.H., Bera, K.L., Tung, C.H., Kwong, D.-L.
Published in IEEE electron device letters (01.02.2004)
Published in IEEE electron device letters (01.02.2004)
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AB0055 Hydroxychloroquine inhibits soluble cd154 production through ca2+ and pkc signalling pathway
Tung, C.H., Hsu, J.-M., Lu, M.-C., Lai, N.-S.
Published in Annals of the rheumatic diseases (01.06.2018)
Published in Annals of the rheumatic diseases (01.06.2018)
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