The pn Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping
Tu, Wen-Hsien, Hsu, Shu-Han, Liu, Chee-Wee
Published in IEEE transactions on electron devices (01.07.2014)
Published in IEEE transactions on electron devices (01.07.2014)
Get full text
Journal Article
Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
Wong, I-Hsieh, Chen, Yen-Ting, Huang, Shih-Hsien, Tu, Wen-Hsien, Chen, Yu-Sheng, Liu, Chee Wee
Published in IEEE transactions on nanotechnology (01.09.2015)
Published in IEEE transactions on nanotechnology (01.09.2015)
Get full text
Journal Article
Junctionless Gate-all-around pFETs on Si with In-situ doped Ge channel
I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Chih-Hsiung Huang, Yu-Sheng Chen, Tai-Cheng Shieh, Liu, C. W.
Published in 2015 International Symposium on VLSI Technology, Systems and Applications (01.04.2015)
Published in 2015 International Symposium on VLSI Technology, Systems and Applications (01.04.2015)
Get full text
Conference Proceeding
Nearly defect-free Ge gate-all-around FETs on Si substrates
Shu-Han Hsu, Chun-Lin Chu, Wen-Hsien Tu, Yen-Chun Fu, Po-Jung Sung, Hung-Chih Chang, Yen-Ting Chen, Li-Yaw Cho, Hsu, W., Guang-Li Luo, Liu, C. W., Chenming Hu, Fu-Liang Yang
Published in 2011 International Electron Devices Meeting (01.12.2011)
Published in 2011 International Electron Devices Meeting (01.12.2011)
Get full text
Conference Proceeding
SiGe Nanoring Formation
Wen-Hsien Tu, Huang, S.-H, Liu, C. W.
Published in 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2012)
Published in 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2012)
Get full text
Conference Proceeding
Ge gate-all-around FETs on Si
Liu, C. W., I-Hsieh Wong, Yen-Ting Chen, Wen-Hsien Tu, Shih-Hsien Huang, Shu-Han Hsu
Published in 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (01.10.2014)
Published in 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (01.10.2014)
Get full text
Conference Proceeding
Surface Orientation Effects on SiGe Quantum Dots and Nanorings Formation
Lee, Cheng-Han, Tu, Wen-Hsien, Lin, Cheng-Ming, Chang, Hung-Tai, Lee, Sheng-Wei, Liu, C. W.
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
Get full text
Journal Article
In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring Ion = 828 µA/µm, Ion/Ioff ∼ 1×105, DIBL= 16-54 mV/V, and 1.4X external strain enhancement
I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Yu-Sheng Chen, Tai-Cheng Shieh, Tzu-Yao Lin, Huang-Siang Lan, Liu, C. W.
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Get full text
Conference Proceeding
Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced Ion and nearly defect-free channels
Shu-Han Hsu, Hung-Chih Chang, Chun-Lin Chu, Yen-Ting Chen, Wen-Hsien Tu, Fu Ju Hou, Chih Hung Lo, Po-Jung Sung, Bo-Yuan Chen, Guo-Wei Huang, Guang-Li Luo, Liu, C. W., Chenming Hu, Fu-Liang Yang
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
Get full text
Conference Proceeding