Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching
Tu, Chien-Te, Hsieh, Wan-Hsuan, Huang, Bo-Wei, Chen, Yu-Rui, Liu, Yi-Chun, Tsai, Chung-En, Chueh, Shee-Jier, Liu, C. W.
Published in IEEE electron device letters (01.05.2022)
Published in IEEE electron device letters (01.05.2022)
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Journal Article
Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated Into Eight Stacked Ge0.95Si0.05 Nanowires and Nanosheets nFETs to Boost ION
Chen, Wei-Jen, Liu, Yi-Chun, Chen, Yun-Wen, Chen, Yu-Rui, Lin, Hsin-Cheng, Tu, Chien-Te, Huang, Bo-Wei, Liu, C. W.
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched VT by Band Alignments of Individual Channels
Hsieh, Wan-Hsuan, Tu, Chien-Te, Chen, Yu-Rui, Huang, Bo-Wei, Chen, Wei-Jen, Liu, Yi-Chun, Cheng, Chun-Yi, Chou, Hung-Chun, Liu, C. W.
Published in IEEE transactions on electron devices (01.05.2024)
Published in IEEE transactions on electron devices (01.05.2024)
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Journal Article
Strain Evolution in SiGe Nanosheet Transistor Process Flow
Chou, Hung-Chun, Chou, Tao, Chueh, Shee-Jier, Jan, Sun-Rong, Huang, Bo-Wei, Tu, Chien-Te, Liu, Yi-Chun, Wang, Li-Kai, Liu, C. W.
Published in IEEE transactions on electron devices (01.05.2024)
Published in IEEE transactions on electron devices (01.05.2024)
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Journal Article
Breakdown Voltage Enhancement of Nanosheet Transistors by Ultrathin Bodies
Huang, Bo-Wei, Hsieh, Wan-Hsuan, Tu, Chien-Te, Liu, Yi-Chun, Chen, Yu-Rui, Chen, Wei-Jen, Cheng, Chun-Yi, Chou, Hung-Chun, Liu, C. W.
Published in IEEE electron device letters (01.06.2024)
Published in IEEE electron device letters (01.06.2024)
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Journal Article
Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching
Huang, Bo-Wei, Tsai, Chung-En, Liu, Yi-Chun, Tu, Chien-Te, Hsieh, Wan-Hsuan, Jan, Sun-Rong, Chen, Yu-Rui, Chueh, Shee-Jier, Cheng, Chun-Yi, Liu, C. W.
Published in IEEE transactions on electron devices (01.04.2022)
Published in IEEE transactions on electron devices (01.04.2022)
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Journal Article
First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles
Chen, Yu-Rui, Liu, Yi-Chun, Zhao, Zefu, Hsieh, Wan-Hsuan, Lee, Jia-Yang, Tu, Chien-Te, Huang, Bo-Wei, Wang, Jer-Fu, Chueh, Shee-Jier, Xing, Yifan, Chen, Guan-Hua, Chou, Hung-Chun, Woo, Dong Soo, Lee, M. H., Liu, C. W.
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies
Tsai, Chung-En, Cheng, Chun-Yi, Huang, Bo-Wei, Lin, Hsin-Cheng, Chou, Tao, Tu, Chien-Te, Liu, Yi-Chun, Jan, Sun-Rong, Chen, Yu-Rui, Hsieh, Wan-Hsuan, Chiu, Kung-Ying, Chueh, Shee-Jier, Liu, C. W.
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
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Conference Proceeding
Nanosheet Extensions and Beyond
Tu, Chien-Te, Liu, Yi-Chun, Chen, Yu-Rui, Huang, Bo-Wei, Cheng, Chun-Yi, Liu, C. W.
Published in 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) (17.04.2023)
Published in 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) (17.04.2023)
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Conference Proceeding
First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels
Tu, Chien-Te, Hsieh, Wan-Hsuan, Chen, Yu-Rui, Huang, Bo-Wei, Liao, Yu-Tsung, Chen, Wei-Jen, Liu, Yi-Chun, Cheng, Chun-Yi, Chou, Hung-Chun, Lu, Hao-Yi, Hsin, Cheng-Hsien, He, Geng-Min, Woo, Dong Soo, Chueh, Shee-Jier, Liu, C. W.
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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Conference Proceeding
First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μA at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V
Tu, Chien-Te, Huang, Yu-Shiang, Lu, Fang-Liang, Liu, Hsiao-Hsuan, Lin, Chung-Yi, Liu, Yi-Chun, Liu, C. W.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
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Conference Proceeding
Extremely High-κ Hf 0.2 Zr 0.8 O 2 Gate Stacks Integrated Into Eight Stacked Ge 0.95 Si 0.05 Nanowires and Nanosheets nFETs to Boost I ON
Chen, Wei-Jen, Liu, Yi-Chun, Chen, Yun-Wen, Chen, Yu-Rui, Lin, Hsin-Cheng, Tu, Chien-Te, Huang, Bo-Wei, Liu, C. W.
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Interfacial-Layer-Free Ge 0.95 Si 0.05 Nanosheet FeFETs
Hsieh, Wan-Hsuan, Chen, Yu-Rui, Liu, Yi-Chun, Zhao, Zefu, Lee, Jia-Yang, Tu, Chien-Te, Huang, Bo-Wei, Wang, Jer-Fu, Lee, M. H., Liu, C. W.
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
Multi- V T of Stacked GeSn Nanosheets by ALD WN x C y Work Function Metal
Chen, Yu-Rui, Huang, Bo-Wei, Cheng, Chun-Yi, Hsieh, Wan-Hsuan, Tsai, Chung-En, Tu, Chien-Te, Liu, Yi-Chun, Liu, C. W.
Published in IEEE transactions on electron devices (01.07.2022)
Published in IEEE transactions on electron devices (01.07.2022)
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Journal Article
I ON Enhancement of Ge 0.98 Si 0.02 Nanowire nFETs by High- κ Dielectrics
Chen, Yu-Rui, Zhao, Zefu, Tu, Chien-Te, Liu, Yi-Chun, Huang, Bo-Wei, Xing, Yifan, Chen, Guan-Hua, Liu, C. W.
Published in IEEE electron device letters (01.10.2022)
Published in IEEE electron device letters (01.10.2022)
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Journal Article
Optical Detection of Parasitic Channels of Vertically Stacked Ge 0.98 Si 0.02 nGAAFETs
Lin, Shih-Ya, Liu, Hsiao-Hsuan, Tu, Chien-Te, Huang, Yu-Shiang, Lu, Fang-Liang, Liu, C. W.
Published in IEEE transactions on electron devices (01.10.2020)
Published in IEEE transactions on electron devices (01.10.2020)
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Journal Article
Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched V T by Band Alignments of Individual Channels
Hsieh, Wan-Hsuan, Tu, Chien-Te, Chen, Yu-Rui, Huang, Bo-Wei, Chen, Wei-Jen, Liu, Yi-Chun, Cheng, Chun-Yi, Chou, Hung-Chun, Liu, C. W.
Published in IEEE transactions on electron devices (01.05.2024)
Published in IEEE transactions on electron devices (01.05.2024)
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Journal Article
Uniform 4-Stacked Ge 0.9 Sn 0.1 Nanosheets Using Double Ge 0.95 Sn 0.05 Caps by Highly Selective Isotropic Dry Etch
Tu, Chien-Te, Huang, Yu-Shiang, Cheng, Chun-Yi, Tsai, Chung-En, Chen, Jyun-Yan, Ye, Hung-Yu, Lu, Fang-Liang, Liu, C. W.
Published in IEEE transactions on electron devices (01.04.2021)
Published in IEEE transactions on electron devices (01.04.2021)
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Journal Article
Interfacial-Layer-Free Ge0.95Si0.05 Nanosheet FeFETs
Hsieh, Wan-Hsuan, Chen, Yu-Rui, Liu, Yi-Chun, Zhao, Zefu, Lee, Jia-Yang, Tu, Chien-Te, Huang, Bo-Wei, Wang, Jer-Fu, Lee, M. H., Liu, C. W.
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-κ Dielectrics
Chen, Yu-Rui, Zhao, Zefu, Tu, Chien-Te, Liu, Yi-Chun, Huang, Bo-Wei, Xing, Yifan, Chen, Guan-Hua, Liu, C. W.
Published in IEEE electron device letters (01.10.2022)
Published in IEEE electron device letters (01.10.2022)
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Journal Article