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Year of Publication 25.07.2024
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Year of Publication 25.07.2024
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Confined Source/Drain Epitaxy Regions and Method Forming Same
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Year of Publication 20.06.2024
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Year of Publication 20.06.2024
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Confined source/drain epitaxy regions and method forming same
Yu, Jeng-Wei, Yu, Ming-Hua, Yang, Tsung-Hsi, Chou, Li-Wei, Kwok, Tsz-Mei
Year of Publication 02.04.2024
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Year of Publication 02.04.2024
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Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same
Yu, Jeng-Wei, Yu, Ming-Hua, Lee, Yi-Jing, Chou, Li-Wei, Kwok, Tsz-Mei
Year of Publication 20.02.2024
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Year of Publication 20.02.2024
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DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION
Sung, Hsueh-Chang, Li, Chii-Horng, Li, Kun-Mu, Lee, Tze-Liang, Kwok, Tsz-Mei
Year of Publication 16.11.2023
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Year of Publication 16.11.2023
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Doping profile for strained source/drain region
Sung, Hsueh-Chang, Li, Chii-Horng, Li, Kun-Mu, Lee, Tze-Liang, Kwok, Tsz-Mei
Year of Publication 05.09.2023
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Year of Publication 05.09.2023
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Adjusting the Profile of Source/Drain Regions to Reduce Leakage
Yang, Yung-Chun, Wen, Cheng-Yen, Su, Li-Li, Yeo, Yee-Chia, Kwok, Tsz-Mei
Year of Publication 26.01.2023
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Year of Publication 26.01.2023
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Source and drain stressors with recessed top surfaces
Sung, Hsueh-Chang, Li, Chii-Horng, Li, Kun-Mu, Lee, Tze-Liang, Kwok, Tsz-Mei
Year of Publication 06.09.2022
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Year of Publication 06.09.2022
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MOS devices having epitaxy regions with reduced facets
Sung, Hsueh-Chang, Li, Chii-Horng, Li, Kun-Mu, Lee, Tze-Liang, Kwok, Tsz-Mei
Year of Publication 09.08.2022
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Year of Publication 09.08.2022
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