Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography
Tsutsui, Kazuo, Matsushita, Tomohiro, Natori, Kotaro, Muro, Takayuki, Morikawa, Yoshitada, Hoshii, Takuya, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Hayashi, Kouichi, Matsui, Fumihiko, Kinoshita, Toyohiko
Published in Nano letters (13.12.2017)
Published in Nano letters (13.12.2017)
Get full text
Journal Article
Effects of hydrogen radical treatment on piezoresistance coefficients of germanium
Matsuda, Kazunori, Yamamoto, Masashi, Mikawa, Michio, Nagaoka, Shiro, Mori, Nobuya, Tsutsui, Kazuo
Published in Applied physics express (01.04.2023)
Published in Applied physics express (01.04.2023)
Get full text
Journal Article
Robust formation of ferroelectric HfO2 films by Y2O3 sub-monolayer lamination
Mizutani, Kazuto, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Chang, Edward Y., Kakushima, Kuniyuki
Published in Applied physics express (01.12.2022)
Published in Applied physics express (01.12.2022)
Get full text
Journal Article
Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization
Imai, Shinya, Hamada, Takuya, Hamada, Masaya, Shirokura, Takanori, Muneta, Iriya, Kakushima, Kuniyuki, Tatsumi, Tetsuya, Tomiya, Shigetaka, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
Get full text
Journal Article
Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure
Muneta, Iriya, Shirokura, Takanori, Hai, Pham Nam, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Scientific reports (13.10.2022)
Published in Scientific reports (13.10.2022)
Get full text
Journal Article
Experimental demonstration of high-gain CMOS inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs
Kawanago, Takamasa, Matsuzaki, Takahiro, Kajikawa, Ryosuke, Iriya Muneta, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
Get full text
Journal Article
Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing
Kurohara, Keita, Imai, Shinya, Hamada, Takuya, Tatsumi, Tetsuya, Tomiya, Shigetaka, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (2024)
Published in IEEE journal of the Electron Devices Society (2024)
Get full text
Journal Article
Enhancement-mode accumulation capacitance-voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks
Tanigawa, Haruki, Matsuura, Kentaro, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.07.2020)
Published in Japanese Journal of Applied Physics (01.07.2020)
Get full text
Journal Article
Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing
Horiguchi, Taiga, Hamada, Takuya, Hamada, Masaya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
Get full text
Journal Article
Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness
Ohashi, Takumi, Muneta, Iriya, Matsuura, Kentaro, Ishihara, Seiya, Hibino, Yusuke, Sawamoto, Naomi, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ogura, Atsushi, Wakabayashi, Hitoshi
Published in Applied physics express (01.04.2017)
Published in Applied physics express (01.04.2017)
Get full text
Journal Article
Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing
Toyama, Mayato, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun ichi, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.07.2018)
Published in Japanese Journal of Applied Physics (01.07.2018)
Get full text
Journal Article
High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization
Hamada, Masaya, Matsuura, Kentaro, Sakamoto, Takuro, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (01.01.2019)
Published in IEEE journal of the Electron Devices Society (01.01.2019)
Get full text
Journal Article
Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing
Hamada, Takuya, Tomiya, Shigetaka, Tatsumi, Tetsuya, Hamada, Masaya, Horiguchi, Taiga, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
Get full text
Journal Article
WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box
Hamada, Takuya, Hamada, Masaya, Igarashi, Satoshi, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
Get full text
Journal Article
Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-type and P-type Tungsten Diselenide Field-Effect Transistors with Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact
Kawanago, Takamasa, Kajikawa, Ryosuke, Mizutani, Kazuto, Tsai, Sung-Lin, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (01.01.2023)
Published in IEEE journal of the Electron Devices Society (01.01.2023)
Get full text
Journal Article
Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors
Takei, Yusuke, Tsutsui, Kazuo, Saito, Wataru, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Iwai, Hiroshi
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
Get full text
Journal Article
Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs
Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Kakushima, Kuniyuki, Hoshii, Takuya, Tsutsui, Kazuo, Iwai, Hiroshi, Nishizawa, Shin-ichi, Omura, Ichiro, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
Get full text
Journal Article
NiSi2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO2 thin films
Molina-Reyes, Joel, Hoshii, Takuya, Ohmi, Shun-Ichiro, Funakubo, Hiroshi, Hori, Atsushi, Fujiwara, Ichiro, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
Get full text
Journal Article