A Flexible 0.18 \mu BiCMOS Technology Suitable for Various Applications
Hashimoto, Takashi, Nonaka, Yusuke, Tominari, Tatsuya, Fujiwara, Tsuyoshi, Udo, Tsutomu, Satoh, Hidenori, Watanabe, Kunihiko, Jimbo, Tomoko, Shimamoto, Hiromi, Isomura, Satoru
Published in IEEE journal of the Electron Devices Society (01.11.2013)
Published in IEEE journal of the Electron Devices Society (01.11.2013)
Get full text
Journal Article
A Flexible 0.18 formula formulatype="inline"> tex Notation="TeX">$\mu{\rm m}$ /tex> /formula> BiCMOS Technology Suitable for Various Applications
Takashi Hashimoto, Yusuke Nonaka, Tatsuya Tominari, Tsuyoshi Fujiwara, Tsutomu Udo, Hidenori Satoh, Kunihiko Watanabe, Tomoko Jimbo, Hiromi Shimamoto, Satoru Isomura
Published in IEEE journal of the Electron Devices Society (01.01.2013)
Published in IEEE journal of the Electron Devices Society (01.01.2013)
Get full text
Journal Article
HCl-free selective epitaxial Si-Ge growth by LPCVD for high-frequency HBTs
Kiyota, Y., Udo, T., Hashimoto, T., Kodama, A., Shimamoto, H., Hayami, R., Ohue, E., Washio, K.
Published in IEEE transactions on electron devices (01.05.2002)
Published in IEEE transactions on electron devices (01.05.2002)
Get full text
Journal Article
Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay
Tominari, Wada, Tokunaga, Koyu, Kubo, Udo, Seto, Ohhata, Hosoe, Kiyota, Washio, Hashimoto
Published in 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) (2003)
Published in 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) (2003)
Get full text
Conference Proceeding
Semiconductor device and a method of manufacturing the same
Hashimoto, Takashi, Mikami, Kouji, Udo, Tsutomu, Kondo, Masao, Oue, Eiji
Year of Publication 14.06.2005
Get full text
Year of Publication 14.06.2005
Patent
Semiconductor device and a method of manufacturing the same
OUE, EIJI, UDO, TSUTOMU, KONDO, MASAO, HASHIMOTO, TAKASHI, MIKAMI, KOUJI
Year of Publication 11.08.2003
Get full text
Year of Publication 11.08.2003
Patent