Effect of middle temperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metalorganic chemical vapor deposition
Tsukihara, M., Sumiyoshi, K., Okimoto, T., Kataoka, K., Kawamichi, S., Nishino, K., Naoi, Y., Sakai, S.
Published in Journal of crystal growth (01.03.2007)
Published in Journal of crystal growth (01.03.2007)
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Journal Article
Conference Proceeding
GaN- and AlGaN-based UV-LEDs on sapphire by metal-organic chemical vapor deposition
Okimoto, T., Tsukihara, M., Kataoka, K., Kato, A., Nishino, K., Naoi, Y., Sakai, S.
Published in Physica status solidi. C (01.07.2008)
Published in Physica status solidi. C (01.07.2008)
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Journal Article
Non-Uniform Dose Mapping Controlled by Modulated Vertical and Horizontal Scans
Ninomiya, S, Kimura, Y, Kudo, T, Ochi, A, Toda, R, Tsukihara, M, Sato, F, Fuse, G, Ueno, K, Sugitani, M
Published in AIP conference proceedings (01.01.2008)
Published in AIP conference proceedings (01.01.2008)
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Journal Article
AlGaN films grown on trenched sapphire substrates using a low-temperature GaNP buffer layer by MOCVD
Sumiyoshi, K., Tsukihara, M., Kawamichi, S., Yan, F., Sakai, S.
Published in Physica status solidi. C (01.06.2006)
Published in Physica status solidi. C (01.06.2006)
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Journal Article
Diffusion effect-induced InNAs films growth on GaAs (1 0 0) substrates by MOCVD
Yan, F.W., Naoi, Y., Tsukihara, M., Kawamichi, S., Yadani, T., Sumiyoshi, K., Sakai, S.
Published in Physica. B, Condensed matter (01.04.2006)
Published in Physica. B, Condensed matter (01.04.2006)
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Journal Article
Effects of V/III flux ratio on AlInGaN/AlGaN quantum wells grown by atmospheric pressure MOCVD
Choi, R. J., Kubo, S., Tsukihara, M., Inoue, K., Naoi, Y., Nishino, K., Sakai, S.
Published in Physica status solidi. C (01.05.2005)
Published in Physica status solidi. C (01.05.2005)
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Journal Article
Cracks and dislocation structures in AlGaN systems
Maksimov, I. L., Li, H. D., Sugahara, T., Tsukihara, M., Mori, A., Sakai, S.
Published in Physica status solidi. C (01.12.2003)
Published in Physica status solidi. C (01.12.2003)
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Journal Article
Energy contamination control system in deceleration beam line
Muroaka, H., Tsukihara, M., Kabasawa, M., Sugitani, M., Hidaka, Y.
Published in 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) (2000)
Published in 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) (2000)
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Conference Proceeding
Diffusion effect-induced InNAs films growth on GaAs (100) substrates by MOCVD
YAN, F. W, NAOI, Y, TSUKIHARA, M, KAWAMICHI, S, YADANI, T, SUMIYOSHI, K, SAKAI, S
Published in Physica. B, Condensed matter (2006)
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Published in Physica. B, Condensed matter (2006)
Conference Proceeding
Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition
Okimoto, Takashi, Tsukihara, Masashi, Sumiyoshi, Kazuhide, Kataoka, Ken, Nishino, Katsushi, Naoi, Yoshiki, Sakai, Shiro
Published in Japanese Journal of Applied Physics (01.03.2006)
Published in Japanese Journal of Applied Physics (01.03.2006)
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Journal Article
Effects of VIII flux ratio on AlInGaN/AlGaN quantum wells grown by atmospheric pressure MOCVD
Choi, R J, Kubo, S, Tsukihara, M, Inoue, K, Naoi, Y, Nishino, K, Sakai, S
Published in Physica status solidi. C (01.01.2005)
Published in Physica status solidi. C (01.01.2005)
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Journal Article
Monitoring of W accumulation in ion implanter beam line utilizing portable XRF instrument
Kawasaki, Y., Fuse, G., Koike, M., Ooga, E., Morita, T., Tsukihara, M., Sugitani, M.
Published in 2014 International Workshop on Junction Technology (IWJT) (01.05.2014)
Published in 2014 International Workshop on Junction Technology (IWJT) (01.05.2014)
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Conference Proceeding