A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology
Hirano, Yuuichi, Tsujiuchi, Mikio, Ishikawa, Kozo, Shinohara, Hirofumi, Terada, Takashi, Maki, Yukio, Iwamatsu, Toshiaki, Eikyu, Katsumi, Uchida, Tetsuya, Obayashi, Shigeki, Nii, Koji, Tsukamoto, Yasumasa, Yabuuchi, Makoto, Ipposhi, Takashi, Oda, Hidekazu, Inoue, Yasuo
Published in Japanese Journal of Applied Physics (01.04.2008)
Published in Japanese Journal of Applied Physics (01.04.2008)
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Journal Article
A Robust SOI SRAM Architecture by using Advanced ABC technology for 32nm node and beyond LSTP devices
Hirano, Y., Tsujiuchi, M., Ishikawa, K., Shinohara, H., Terada, T., Maki, Y., Iwamatsu, T., Eikyu, K., Uchida, T., Obayashi, S., Nii, K., Tsukamoto, Y., Yabuuchi, M., Ipposhi, T., Oda, H., Inoue, Y.
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
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Conference Proceeding
Evolution of 200V lateral-IGBT technology
Tsujiuchi, Mikio, Nitta, Tetsuya, Ipposhi, Takashi, Maegawa, Shigeto
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
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Conference Proceeding
Effect of NH 3 -Free Silicon Nitride for Protection Layer of Magnetic Tunnel Junction on Magnetic Properties of Magnetoresistive Random Access Memory
Murata, Tatsunori, Miyagawa, Yoshihiro, Isaki, Ryuichiro, Shibata, Toshinori, Matsuda, Ryoji, Tsujiuchi, Mikio, Takeuchi, Yosuke, Ueno, Shuichi, Matsuura, Masazumi, Asai, Koyu, Kojima, Masayuki
Published in Japanese Journal of Applied Physics (01.04.2009)
Published in Japanese Journal of Applied Physics (01.04.2009)
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Journal Article
A Novel Low-Power and High-Speed SOI SRAM With Actively Body-Bias Controlled (ABC) Technology for Emerging Generations
Hirano, Y., Tsujiuchi, M., Maki, Y., Iwamatsu, T., Ishii, Y., Miyanishi, A., Tsukamoto, Y., Nii, K., Ipposhi, T., Oda, H., Maegawa, S., Inoue, Y.
Published in IEEE transactions on electron devices (01.01.2008)
Published in IEEE transactions on electron devices (01.01.2008)
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Journal Article