High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates
Dumka, D.C., Tserng, H.Q., Kao, M.Y., Beam, E.A., Saunier, P.
Published in IEEE electron device letters (01.03.2003)
Published in IEEE electron device letters (01.03.2003)
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Journal Article
AlGaN∕GaN HEMTs on Si substrate with 7 W∕mm output power density at 10 GHz
Dumka, D.C., Lee, C., Tserng, H.Q., Saunier, P., Kumar, M.
Published in Electronics letters (05.08.2004)
Published in Electronics letters (05.08.2004)
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Journal Article
Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFET
Kim, B., Matyi, R.J., Wurtele, M., Bradshaw, K., Khatibzadeh, M.A., Tserng, H.Q.
Published in IEEE transactions on electron devices (01.10.1989)
Published in IEEE transactions on electron devices (01.10.1989)
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Journal Article
Progress in GaN Performances and Reliability
Saunier, P., Lee, C., Balistreri, A., Dumka, D., Jimenez, J., Tserng, H.Q., Kao, M.Y., Chao, P.C., Chu, K., Souzis, A., Eliashevich, I., Guo, S., del Alamo, J., Joh, J., Shur, M.
Published in 2007 65th Annual Device Research Conference (01.06.2007)
Published in 2007 65th Annual Device Research Conference (01.06.2007)
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Conference Proceeding
A low loss, 5.5 GHz-20 GHz monolithic balun
Tutt, M.N., Tserng, H.Q., Ketterson, A.
Published in 1997 IEEE MTT-S International Microwave Symposium Digest (1997)
Published in 1997 IEEE MTT-S International Microwave Symposium Digest (1997)
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Conference Proceeding
High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAs
Shih, H.-D., Kim, B., Bradshaw, K., Tserng, H.Q.
Published in IEEE electron device letters (01.11.1988)
Published in IEEE electron device letters (01.11.1988)
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Journal Article
A highly-efficient 7-watt 16 GHz monolithic pseudomorphic HEMT amplifier
Tserng, H.Q., Saunier, P.
Published in 1993 IEEE MTT-S International Microwave Symposium Digest (1993)
Published in 1993 IEEE MTT-S International Microwave Symposium Digest (1993)
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Conference Proceeding
Harmonic tuning of power FETs at X-band
Khatibzadeh, M.A., Tserng, H.Q.
Published in IEEE International Digest on Microwave Symposium (1990)
Published in IEEE International Digest on Microwave Symposium (1990)
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Conference Proceeding
S-Band GaAs Power FET
Macksey, H.M., Tserng, H.Q., Westphal, G.H.
Published in 1982 IEEE MTT-S International Microwave Symposium Digest (1982)
Published in 1982 IEEE MTT-S International Microwave Symposium Digest (1982)
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Conference Proceeding
GaAs power MESFET with 41-percent power-added efficiency at 35 GHz
Kim, B., Wurtele, M., Shih, H.D., Tserng, H.Q.
Published in IEEE electron device letters (01.02.1988)
Published in IEEE electron device letters (01.02.1988)
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Journal Article
Millimeter-wave GaAs power FET with a pulse-doped InGaAs channel
Kim, B., Shih, H.-D., Wurtele, M., Tserng, H.Q.
Published in IEEE electron device letters (01.05.1988)
Published in IEEE electron device letters (01.05.1988)
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Journal Article