Growth of III-N/graphene heterostructures in single vapor phase epitaxial process
Lundin, W.V., Zavarin, E.E., Sakharov, A.V., Zakheim, D.A., Davydov, V.Yu, Smirnov, A.N., Eliseyev, I.A., Yagovkina, M.A., Brunkov, P.N., Lundina, E.Yu, Markov, L.K., Tsatsulnikov, A.F.
Published in Journal of crystal growth (15.12.2018)
Published in Journal of crystal growth (15.12.2018)
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Journal Article
High growth rate MOVPE of Al(Ga)N in planetary reactor
Lundin, W.V., Nikolaev, A.E., Yagovkina, M.A., Brunkov, P.N., Rozhavskaya, M.M., Ber, B.Ya, Kazantsev, D.Yu, Tsatsulnikov, A.F., Lobanova, A.V., Talalaev, R.A.
Published in Journal of crystal growth (01.08.2012)
Published in Journal of crystal growth (01.08.2012)
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Journal Article
Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Usov, S. O., Zavarin, E. E., Brunkov, P. N., Yagovkina, M. A., Cherkashin, N. A., Tsatsulnikov, A. F.
Published in Semiconductors (Woodbury, N.Y.) (2014)
Published in Semiconductors (Woodbury, N.Y.) (2014)
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Journal Article
InGaN/GaN heterostructures grown by submonolayer deposition
Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Sakharov, A. V., Musikhin, Yu. G., Usov, S. O., Mizerov, M. N., Cherkashin, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
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Journal Article
Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Nikolaev, A. E., Sakharov, A. V., Rozhavskaya, M. M., Usov, S. O., Brunkov, P. N., Synitsin, M. A., Davydov, D. V., Mizerov, M. N., Cherkashin, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
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Journal Article
Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Cherkashin, N. A., Ber, B. Ya, Kazantsev, D. Yu, Mizerov, M. N., Park, Hee Seok, Hytch, M., Hue, F.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
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Journal Article
The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
Sizov, V. S., Tsatsulnikov, A. F., Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Cherkashin, N. A., Hÿtch, M. J., Nikolaev, A. E., Mintairov, A. M., He, Yan, Merz, J. L.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2010)
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Journal Article
Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Sakharov, A. V., Usov, S. O., Nikolaev, A. E., Davydov, D. V., Cherkashin, N. A., Tsatsulnikov, A. F.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
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Journal Article
High-Power AlGaInN LEDs Operated Under High Pulsed Current Density (up to 7 kA/cm2)
Aladov, A.V., Chernyakov, A.E., Ivanov, A.E., Zakgeim, A.L., Tsatsulnikov, A.F.
Published in 2020 International Conference Laser Optics (ICLO) (02.11.2020)
Published in 2020 International Conference Laser Optics (ICLO) (02.11.2020)
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Conference Proceeding
Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs
Arteev, D.S., Sakharov, A.V., Nikolaev, A.E., Lundin, W.V., Tsatsulnikov, A.F.
Published in Journal of luminescence (01.06.2021)
Published in Journal of luminescence (01.06.2021)
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Journal Article
Study of silicon nitride deposition in III-N MOVPE reactors
Lundin, W.V., Rodin, S.N., Zavarin, E.E., Sakharov, A.V., Zakheim, D.A., Nikolaev, A.E., Tsatsulnikov, A.F.
Published in Journal of crystal growth (01.12.2020)
Published in Journal of crystal growth (01.12.2020)
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Journal Article
Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes
Barettin, Daniele, Maur, Matthias Auf der, Carlo, Aldo di, Pecchia, Alessandro, Tsatsulnikov, Andrei F, Sakharov, Alexei V, Lundin, Wsevolod V, Nikolaev, Andrei E, Usov, Sergey O, Cherkashin, Nikolay, Hÿtch, Martin J, Karpov, Sergey Yu
Published in Nanotechnology (06.01.2017)
Published in Nanotechnology (06.01.2017)
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Journal Article
Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
Dubrovskii, V.G., Cirlin, G.E., Musikhin, Yu.G., Samsonenko, Yu.B., Tonkikh, A.A., Polyakov, N.K., Egorov, V.A., Tsatsul’nikov, A.F., Krizhanovskaya, N.A., Ustinov, V.M., Werner, P.
Published in Journal of crystal growth (15.06.2004)
Published in Journal of crystal growth (15.06.2004)
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Journal Article
Fast AlGaN growth in a whole composition range in planetary reactor
Lundin, W.V., Nikolaev, A.E., Rozhavskaya, M.M., Zavarin, E.E., Sakharov, A.V., Troshkov, S.I., Yagovkina, M.A., Tsatsulnikov, A.F.
Published in Journal of crystal growth (01.05.2013)
Published in Journal of crystal growth (01.05.2013)
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Journal Article
Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAIn heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
Tsatsulnikov, A.F, Lundin, V.W, Zavarin, E.E, Yagovkina, M.A, Sakharov, A.V, Usov, S.O, Zemlyakov, V.E, Egorkin, V.I, Bulashevich, K.A, Karpov, S.Yu, Ustinov, V.M
Published in Semiconductors (Woodbury, N.Y.) (01.10.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2016)
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Journal Article
Capacitance--voltage characteristics of /[Al.sub.2] [O.sub.3]/n-GaN MIS structures
Ivanov, P.A, Potapov, A.S, Nikolaev, A.E, Lundin, V.V, Sakharov, A.V, Tsatsulnikov, A.F, Afanas'ev, A.V, Romanov, A.A, Osachev, E.V
Published in Semiconductors (Woodbury, N.Y.) (01.08.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2015)
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Journal Article
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
Tikhomirov, V. G., Zemlyakov, V. E., Volkov, V. V., Parnes, Ya. M., Vyuginov, V. N., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Tsatsulnikov, A. F., Cherkashin, N. A., Mizerov, M. N., Ustinov, V. M.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2016)
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Journal Article
Hydrogen effects in III-nitride MOVPE
Yakovlev, E.V., Talalaev, R.A., Segal, A.S., Lobanova, A.V., Lundin, W.V., Zavarin, E.E., Sinitsyn, M.A., Tsatsulnikov, A.F., Nikolaev, A.E.
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Journal Article
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
Lundin, W.V., Nikolaev, A.E., Sakharov, A.V., Zavarin, E.E., Valkovskiy, G.A., Yagovkina, M.A., Usov, S.O., Kryzhanovskaya, N.V., Sizov, V.S., Brunkov, P.N., Zakgeim, A.L., Cherniakov, A.E., Cherkashin, N.A., Hytch, M.J., Yakovlev, E.V., Bazarevskiy, D.S., Rozhavskaya, M.M., Tsatsulnikov, A.F.
Published in Journal of crystal growth (15.01.2011)
Published in Journal of crystal growth (15.01.2011)
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Journal Article