Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory
Lee, Heng Yuan, Chen, Yu Sheng, Chen, Pang Shiu, Tsai, Chen Han, Gu, Pei Yi, Wu, Tai Yuan, Tsai, Kan Hseuh, Rahaman, Shakh Ziaur, Chen, Wei Su, Chen, Frederick, Tsai, Ming-Jing, Lee, Ming Hung, Ku, Tzu Kun
Published in Japanese Journal of Applied Physics (01.08.2014)
Published in Japanese Journal of Applied Physics (01.08.2014)
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