28-nm 2T High- K Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes
Chin Yu Mei, Wen Chao Shen, Chun Hsiung Wu, Yue-Der Chih, Ya-Chin King, Chrong Jung Lin, Ming-Jinn Tsai, Kan-Hsueh Tsai, Chen, Frederick T.
Published in IEEE electron device letters (01.10.2013)
Published in IEEE electron device letters (01.10.2013)
Get full text
Journal Article
The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories
Rahaman, Sk. Ziaur, Lin, Yu-De, Lee, Heng-Yuan, Chen, Yu-Sheng, Chen, Pang-Shiu, Chen, Wei-Su, Hsu, Chien-Hua, Tsai, Kan-Hsueh, Tsai, Ming-Jinn, Wang, Pei-Hua
Published in Langmuir (16.05.2017)
Published in Langmuir (16.05.2017)
Get full text
Journal Article
A new laterally conductive bridge random access memory by fully CMOS logic compatible process
Hsieh, Min-Che, Chin, Yung-Wen, Lin, Yu-Cheng, Chih, Yu-Der, Tsai, Kan-Hsueh, Tsai, Ming-Jinn, King, Ya-Chin, Lin, Chrong Jung
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
Get full text
Journal Article
Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
CHEN, Yu-Sheng, LEE, Heng-Yuan, CHEN, Frederick, TSAI, Ming-Jinn, KU, Tzu-Kun, CHEN, Pang-Shiu, CHEN, Wei-Su, TSAI, Kan-Hsueh, GU, Pei-Yi, WU, Tai-Yuan, TSAI, Chen-Han, RAHAMAN, S. Z, LIN, Yu-De
Published in IEEE electron device letters (01.02.2014)
Published in IEEE electron device letters (01.02.2014)
Get full text
Journal Article
Resistance instabilities in a filament-based resistive memory
Chen, F. T., Heng-Yuan Lee, Yu-Sheng Chen, Rahaman, S. Z., Chen-Han Tsai, Kan-Hsueh Tsai, Tai-Yuan Wu, Wei-Su Chen, Pei-Yi Gu, Yu-De Lin, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Li-Heng Lee, Tzu-Kun Ku, Pang-Shiu Chen
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Get full text
Conference Proceeding
Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics
Lin, Yu-De, Chen, Pang-Shiu, Lee, Heng-Yuan, Chen, Yu-Sheng, Rahaman, Sk Ziaur, Tsai, Kan-Hsueh, Hsu, Chien-Hua, Chen, Wei-Su, Wang, Pei-Hua, King, Ya-Chin, Lin, Chrong Jung
Published in Nanoscale research letters (01.12.2017)
Published in Nanoscale research letters (01.12.2017)
Get full text
Journal Article
Impacts of device architecture and low current operation on resistive switching of HfOx nanoscale devices
Chen, Pang-Shiu, Chen, Yu-Sheng, Lee, Heng-Yuan, Wu, Tai-Yuan, Tsai, Kan-Hsueh, Gu, Pei-Yi, Chen, Wei-Su, Tsai, Chen-Han, Chen, Frederick, Tsai, Ming-Jinn
Published in Microelectronic engineering (01.05.2013)
Published in Microelectronic engineering (01.05.2013)
Get full text
Journal Article
Novel Defects-Trapping / RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wei-Su Chen, Kan-Hsueh Tsai, Pei-Yi Gu, Tai-Yuan Wu, Chen-Han Tsai, Rahaman, S. Z., Yu-De Lin, Chen, Frederick, Ming-Jinn Tsai, Tzu-Kun Ku
Published in IEEE electron device letters (01.02.2014)
Published in IEEE electron device letters (01.02.2014)
Get full text
Journal Article
Modeling of GaN HEMTs on silicon with trapping and self-heating effects for RF applications
Tsou, Chuan-Wei, Tu, Po-Tsung, Tsai, Kan-Hsueh, Yeh, Po-Chun, Lee, Heng-Yuan, Lee, Li-Heng, Hsu, Shawn S. H.
Published in 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2018)
Published in 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2018)
Get full text
Conference Proceeding
Low power/self-compliance of resistive switching elements modified with a conduction Ta-oxide layer through low temperature plasma oxidization of Ta thin film
Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Lin, Y. D., Kan-Hsueh Tsai, Hsu, C. H., Chen, W. S., Ming-Jinn Tsai, Ku, T. K., Wang, P. H.
Published in 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2016)
Published in 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2016)
Get full text
Conference Proceeding
Effect of Ti buffer layer on HfOx-based bipolar and complementary resistive switching for future memory applications
Rahaman, Sk Ziaur, Yu-De Lin, Pei-Yi Gu, Heng-Yuan Lee, Yu-Sheng Chen, Pan-Shiu Chen, Kan-Hsueh Tsai, Wei-Su Chen, Chien-Hua Hsu, Po-Tsung Tu, Chen, Frederick T., Ming-Jinn Tsai, Tzu-Kun Ku, Pei-Hua Wang
Published in 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2016)
Published in 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2016)
Get full text
Conference Proceeding
Good memory performance and coexistence of bipolar and unipolar resistive switching for CMOS compatible Ti/HfOx/W memory
Kan-Hsueh Tsai, Pang-Shiu Chen, Tai-Yuan Wu, Yu-Sheng Chen, Heng-Yuan Lee, Wei-Su Chen, Chen-Han Tsai, Pei-Yi Gu, Rahaman, S. Z., Yu-De Lin, Chen, F., Ming-Jinn Tsai, Tzu-Kun Ku
Published in 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2013)
Published in 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2013)
Get full text
Conference Proceeding
Retention Model of TaO/HfOx and TaO/AlOx RRAM with Self-Rectifying Switch Characteristics
Lin, Yu-De, Chen, Pang-Shiu, Lee, Heng-Yuan, Chen, Yu-Sheng, Rahaman, Sk. Ziaur, Tsai, Kan-Hsueh, Hsu, Chien-Hua, Chen, Wei-Su, Wang, Pei-Hua, King, Ya-Chin, Lin, Chrong Jung
Published in Nanoscale research letters (13.06.2017)
Published in Nanoscale research letters (13.06.2017)
Get full text
Journal Article
Enhanced endurance reliability and low current operation for AlOx/HfOx based unipolar RRAM with Ni electrode
Chen, Yu-Sheng, Chen, Pang-Shiu, Lee, Heng-Yuan, Wu, Tai-Yuan, Tsai, Kan-Hsueh, Chen, Frederick, Tsai, Ming-Jinn
Published in Solid-state electronics (01.04.2014)
Published in Solid-state electronics (01.04.2014)
Get full text
Journal Article
A nonvolatile look-up table using ReRAM for reconfigurable logic
Wen-Pin Lin, Shyh-Shyuan Sheu, Chia-Chen Kuo, Pei-Ling Tseng, Meng-Fan Chang, Keng-Li Su, Chih-Sheng Lin, Kan-Hsueh Tsai, Sih-Han Lee, Szu-Chieh Liu, Yu-Sheng Chen, Heng-Yuan Lee, Ching-Chih Hsu, Chen, Frederick T., Tzu-Kun Ku, Ming-Jinn Tsai, Ming-Jer Kao
Published in 2014 IEEE Asian Solid-State Circuits Conference (A-SSCC) (01.11.2014)
Published in 2014 IEEE Asian Solid-State Circuits Conference (A-SSCC) (01.11.2014)
Get full text
Conference Proceeding
Retention Model of TaO/HfO^sub x^ and TaO/AlO^sub x^ RRAM with Self-Rectifying Switch Characteristics
Lin, Yu-de, Chen, Pang-shiu, Lee, Heng-yuan, Chen, Yu-sheng, Rahaman, Sk Ziaur, Tsai, Kan-hsueh, Hsu, Chien-hua, Chen, Wei-su, Wang, Pei-hua, King, Ya-chin, Lin, Chrong Jung
Published in Nanoscale research letters (01.06.2017)
Published in Nanoscale research letters (01.06.2017)
Get full text
Journal Article
Enhanced endurance reliability and low current operation for AlO sub(x)/HfO sub(x) based unipolar RRAM with Ni electrode
Chen, Yu-Sheng, Chen, Pang-Shiu, Lee, Heng-Yuan, Wu, Tai-Yuan, Tsai, Kan-Hsueh, Chen, Frederick, Tsai, Ming-Jinn
Published in Solid-state electronics (01.04.2014)
Published in Solid-state electronics (01.04.2014)
Get full text
Journal Article