Slight gate oxide thickness increase in PMOS devices with BF 2 implanted polysilicon gate
Jiunn-Yann Tsai, Ying Shi, Prasad, S., Yeh, S.W.-C., Rakkhit, R.
Published in IEEE electron device letters (01.09.1998)
Published in IEEE electron device letters (01.09.1998)
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Journal Article
Elevated n(+)/p junctions by implant into CoSi(2)formed on selective epitaxy for deep submicron MOSFETs
Sun, Jie J, Tsai, Jiunn-Yann, Osburn, C M
Published in IEEE transactions on electron devices (01.09.1998)
Published in IEEE transactions on electron devices (01.09.1998)
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Journal Article
Slight gate oxide thickness increase in PMOS devices with BF2 implanted polysilicon gate
Jiunn-Yann Tsai, Ying Shi, Prasad, S., Yeh, S.W.-C., Rakkhit, R.
Published in IEEE electron device letters (01.09.1998)
Published in IEEE electron device letters (01.09.1998)
Get full text
Journal Article
Slight gate oxide thickness increase in PMOS devices with BF(2) implanted polysilicon gate
Tsai, Jiunn-Yann, Shi, Ying, Prasad, S, Yeh, S W-C, Rakkhit, R
Published in IEEE electron device letters (01.09.1998)
Published in IEEE electron device letters (01.09.1998)
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Journal Article
Slight gate oxide thickness increase in PMOS devices with BF sub(2) implanted polysilicon gate
Tsai, Jiunn-Yann, Shi, Ying, Prasad, Sharad, Yeh, Stanley W-C, Rakkhit, Rajat
Published in IEEE electron device letters (01.09.1998)
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Published in IEEE electron device letters (01.09.1998)
Journal Article
DIBL considerations of extended drain structure for 0.1 /spl mu/m MOSFET's
Jiunn-Yann Tsai, Jie Sun, Yee, K.F., Osburn, C.M.
Published in IEEE electron device letters (01.07.1996)
Published in IEEE electron device letters (01.07.1996)
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Journal Article
DIBL considerations of extended drain structure for 0.1 mu mMOSFET' s
Tsai, Jiunn-Yann, Sun, Jie, Yee, K F, Osburn, C M
Published in IEEE electron device letters (01.07.1996)
Published in IEEE electron device letters (01.07.1996)
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Journal Article
Effect of fluorine incorporation on the thermal stability of PtSi/Si structure
Tsui, Bing-Yue, Tsai, Jiunn-Yan, Wu, Tzong-Shien, Chen, Mao-Chien
Published in IEEE transactions on electron devices (01.01.1993)
Published in IEEE transactions on electron devices (01.01.1993)
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Journal Article
Optimization of lightly-doped-drain (LDD) structure for sub-quarter-/spl mu/m devices using statistical design and response surface methodology
Jiunn-Yann Tsai, Zhang, K.X., Osburn, C.M.
Published in 1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (1995)
Published in 1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (1995)
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