Optical Feedback Interferometry imaging sensor for micrometric flow-patterns using continuous scanning
Flores, D., Quotb, A., Tronche, C., Jayat, F., Trojman, L., Perchoux, J.
Published in 2019 IEEE SENSORS (01.10.2019)
Published in 2019 IEEE SENSORS (01.10.2019)
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Conference Proceeding
Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100)
Trojman, L., Pantisano, L., Ferain, I., Severi, S., Maes, H.E., Groeseneken, G.
Published in IEEE transactions on electron devices (01.12.2008)
Published in IEEE transactions on electron devices (01.12.2008)
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Journal Article
RF Split Capacitance-Voltage Measurements of Short-Channel and Leaky MOSFET Devices
Andres, E.S., Pantisano, L., Ramos, J., Severi, S., Trojman, L., De Gendt, S., Groeseneken, G.
Published in IEEE electron device letters (01.09.2006)
Published in IEEE electron device letters (01.09.2006)
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Journal Article
On the Impact of Defects Close to the Gate Electrode on the Low-Frequency \hbox/f Noise
Magnone, P., Pantisano, L., Crupi, F., Trojman, L., Pace, C., Giusi, G.
Published in IEEE electron device letters (01.09.2008)
Published in IEEE electron device letters (01.09.2008)
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Journal Article
Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation
O'Sullivan, B.J., Kaushik, V.S., Everaert, J.-L., Trojman, L., Ragnarsson, L.-A., Pantisano, L., Rohr, E., DeGendt, S., Heyns, M.
Published in IEEE transactions on electron devices (01.07.2007)
Published in IEEE transactions on electron devices (01.07.2007)
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Journal Article
Reduction of the anomalous VT behavior in MOSFETs with high- κ/metal gate stacks
Ferain, I., Pantisano, L., Kottantharayil, A., Petry, J., Trojman, L., Collaert, N., Jurczak, M., De Meyer, K.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Journal Article
Conference Proceeding
Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI
Aoulaiche, M., Houssa, M., Deweerd, W., Trojman, L., Conard, T., Maes, J.W., De Gendt, S., Groeseneken, G., Maes, H.E., Heyns, M.M.
Published in IEEE electron device letters (01.07.2007)
Published in IEEE electron device letters (01.07.2007)
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Journal Article
Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN
San Andrés, E., Pantisano, L., Severi, S., Trojman, L., Ferain, I., Toledano-Luque, M., Jurczak, M., Groeseneken, G., De Gendt, S., Heyns, M.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Journal Article
Performance assessment of (1 1 0) p-FET high- κ/MG: is it mobility or series resistance limited?
Trojman, L., Pantisano, L., Severi, S., San Andres, E., Hoffman, T., Ferain, I., De Gendt, S., Heyns, M., Maes, H., Groeseneken, G.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Journal Article
Conference Proceeding
Understanding and Importance of Defects in Advanced Materials
Pantisano, Luigi, Trojman, L, Aoulaiche, M, O'Connor, R, Kaczer, B, Groeseneken, G
Published in ECS transactions (2009)
Published in ECS transactions (2009)
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Journal Article
Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
Trojman, L., Ragnarsson, L.-Å., Pantisano, L., Lujan, G.S., Houssa, M., Schram, T., Cubaynes, F., Schaekers, M., Van Ammel, A., Groeseneken, G., De Gendt, S., Heyns, M.
Published in Microelectronic engineering (01.06.2005)
Published in Microelectronic engineering (01.06.2005)
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Journal Article
Conference Proceeding
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices
Guitarra, S., Mahato, P., Deleruyelle, D., Raymond, L., Trojman, L.
Published in Solid-state electronics (01.11.2021)
Published in Solid-state electronics (01.11.2021)
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Journal Article
Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
Ragnarsson, L.-A., Severi, S., Trojman, L., Johnson, K.D., Brunco, D.P., Aoulaiche, M., Houssa, M., Kauerauf, T., Degraeve, R., Delabie, A., Kaushik, V.S., De Gendt, S., Tsai, W., Groeseneken, G., Kristin De Meyer, Heyns, M.
Published in IEEE transactions on electron devices (01.07.2006)
Published in IEEE transactions on electron devices (01.07.2006)
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Journal Article
Trapping in 1nm EOT high-k / MG
Zahid, Mohammed B, Pantisano, Luigi, Degraeve, Robin, Aoulaiche, M, Trojman, L, Ferain, I, San Andres, E, Shickova, A, O'Connor, R., Groeseneken, Guido, Heyns, Marc M., De Gendt, Stefan
Published in ECS transactions (01.01.2008)
Published in ECS transactions (01.01.2008)
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Journal Article
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility
Lujan, G.S., Magnus, W., Sorée, B., Ragnarsson, L-Å, Trojman, L., Kubicek, S., Gendt, S. De, Heyns, M., Meyer, K. De
Published in Microelectronic engineering (01.06.2005)
Published in Microelectronic engineering (01.06.2005)
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Conference Proceeding