Interface traps density-of-states as a vital component for hot-carrier degradation modeling
Tyaginov, S.E., Starkov, I.A., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, Ch, Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Journal Article
Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation
Bina, M., Rupp, K., Tyaginov, S., Triebl, O., Grasser, T.
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
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Conference Proceeding
Hot-carrier degradation modeling using full-band Monte-Carlo simulations
Tyaginov, S E, Starkov, I A, Triebl, O, Cervenka, J, Jungemann, C, Carniello, S, Park, J M, Enichlmair, H, Karner, M, Kernstock, C, Seebacher, E, Minixhofer, R, Ceric, H, Grasser, T
Published in 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2010)
Published in 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2010)
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Conference Proceeding
Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations
Starkov, I A, Tyaginov, S E, Triebl, O, Cervenka, J, Jungemann, C, Carniello, S, Park, J M, Enichlmair, H, Karner, M, Kernstock, C, Seebacher, E, Minixhofer, R, Ceric, H, Grasser, T
Published in 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2010)
Published in 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2010)
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Conference Proceeding
Vector Discretization Schemes Based on Unstructured Neighborhood Information
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Conference Proceeding
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
Tyaginov, S., Starkov, I., Triebl, O., Ceric, H., Grasser, T., Enichlmair, H., Jong-Mun Park, Jungemann, C.
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
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Conference Proceeding
TCAD Modeling of Negative Bias Temperature Instability
Grasser, T., Entner, R., Triebl, O., Enichlmair, H., Minixhofer, R.
Published in 2006 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2006)
Published in 2006 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2006)
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Conference Proceeding
Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique
Hehenberger, P., Aichinger, T., Grasser, T., Gos, W., Triebl, O., Kaczer, B., Nelhiebel, M.
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
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Conference Proceeding
Interface traps density-of states as a vital component for hot-carrier degradation modeling
TYAGINOV, S. E, STARKOV, I. A, SEEBACHER, E, MINIXHOFER, R, CERIC, H, GRASSER, T, TRIEBL, O, CERVENKA, J, JUNGEMANN, C, CARNIELLO, S, PARK, J. M, ENICHLMAIR, H, KARNER, M, KERNSTOCK, Ch
Published in Microelectronics and reliability (2010)
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Published in Microelectronics and reliability (2010)
Conference Proceeding
Impact of gate oxide thickness variations on hot-carrier degradation
Tyaginov, S. E., Starkov, I. A., Triebl, O., Karner, M., Kernstock, C., Jungemann, C., Enichlmair, H., Park, J. M., Grasser, T.
Published in 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2012)
Published in 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.07.2012)
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Conference Proceeding