Junctionless Multiple-Gate Transistors for Analog Applications
Doria, R. T., Pavanello, M. A., Trevisoli, R. D., de Souza, M., Chi-Woo Lee, Ferain, I., Akhavan, N. D., Ran Yan, Razavi, P., Ran Yu, Kranti, A., Colinge, J.
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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Journal Article
A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors
Trevisoli, Renan Doria, Doria, Rodrigo Trevisoli, de Souza, Michelly, Pavanello, Marcelo Antonio
Published in Solid-state electronics (01.12.2013)
Published in Solid-state electronics (01.12.2013)
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Journal Article
Conference Proceeding
Cryogenic Operation of Junctionless Nanowire Transistors
de Souza, M., Pavanello, M. A., Trevisoli, R. D., Doria, R. T., Colinge, J.
Published in IEEE electron device letters (01.10.2011)
Published in IEEE electron device letters (01.10.2011)
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Journal Article
Temperature Analysis of Schottky Diodes Rectifiers for Low-Power RF Energy Harvesting Applications
Da Paz, Humberto Pereira, Da Silva, Vinicius Santana, Diniz, Renan, Trevisoli, Renan, Capovilla, Carlos Eduardo, Casella, Ivan Roberto Santana
Published in IEEE access (01.01.2023)
Published in IEEE access (01.01.2023)
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Journal Article
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices
Trevisoli, Renan Doria, Martino, João Antonio, Simoen, Eddy, Claeys, Cor, Pavanello, Marcelo Antonio
Published in Microelectronics and reliability (01.03.2012)
Published in Microelectronics and reliability (01.03.2012)
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Journal Article
Junctionless nanowire transistors effective channel length extraction through capacitance characteristics
Silva, Everton M., Trevisoli, Renan, Doria, Rodrigo T.
Published in Solid-state electronics (01.10.2023)
Published in Solid-state electronics (01.10.2023)
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Journal Article
Impact of the Series Resistance in the I-V Characteristics of nMOS Junctionless Nanowire Transistors
Doria, Rodrigo T., Trevisoli, Renan D., Pavanello, Marcelo A.
Published in ECS transactions (15.09.2011)
Published in ECS transactions (15.09.2011)
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Journal Article
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors
Costa, Fernando J., Trevisoli, Renan, Doria, Rodrigo T.
Published in Solid-state electronics (01.11.2021)
Published in Solid-state electronics (01.11.2021)
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Journal Article
Cross-coupling effects in common-source current mirrors composed by UTBB transistors
José da Costa, Fernando, Trevisoli, Renan, Trevisoli Doria, Rodrigo
Published in Solid-state electronics (01.08.2022)
Published in Solid-state electronics (01.08.2022)
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Journal Article
Threshold voltage in junctionless nanowire transistors
Trevisoli, Renan Doria, Doria, Rodrigo Trevisoli, de Souza, Michelly, Pavanello, Marcelo Antonio
Published in Semiconductor science and technology (12.10.2011)
Published in Semiconductor science and technology (12.10.2011)
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Journal Article