Insight into boron-doped diamond Raman spectra characteristic features
Mortet, V., Vlčková Živcová, Z., Taylor, A., Frank, O., Hubík, P., Trémouilles, D., Jomard, F., Barjon, J., Kavan, L.
Published in Carbon (New York) (01.05.2017)
Published in Carbon (New York) (01.05.2017)
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Journal Article
Analysis of heavily boron-doped diamond Raman spectrum
Mortet, V., Taylor, A., Vlčková Živcová, Z., Machon, D., Frank, O., Hubík, P., Tremouilles, D., Kavan, L.
Published in Diamond and related materials (01.09.2018)
Published in Diamond and related materials (01.09.2018)
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Journal Article
Characteristics of zirconium and niobium contacts on boron-doped diamond
Davydova, M., Taylor, A., Hubík, P., Fekete, L., Klimša, L., Trémouilles, D., Soltani, A., Mortet, V.
Published in Diamond and related materials (01.03.2018)
Published in Diamond and related materials (01.03.2018)
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Journal Article
Analysis of an ESD failure mechanism on a SiC MESFET
Phulpin, T., Trémouilles, D., Isoird, K., Tournier, D., Godignon, P., Austin, P.
Published in Microelectronics and reliability (01.09.2014)
Published in Microelectronics and reliability (01.09.2014)
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Journal Article
Conference Proceeding
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation
Monnereau, N., Caignet, F., Trémouilles, D., Nolhier, N., Bafleur, M.
Published in Microelectronics and reliability (01.02.2013)
Published in Microelectronics and reliability (01.02.2013)
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Journal Article
Failure analysis of ESD-stressed SiC MESFET
Phulpin, T., Trémouilles, D., Isoird, K., Tournier, D., Godignon, P., Austin, P.
Published in Microelectronics and reliability (01.08.2015)
Published in Microelectronics and reliability (01.08.2015)
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Journal Article
Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements
Ghizzo, L., Trémouilles, D., Richardeau, F., Guibaud, G.
Published in Solid-state electronics (01.04.2024)
Published in Solid-state electronics (01.04.2024)
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Journal Article
Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond
Mortet, V., Taylor, A., Davydova, M., Fekete, L., Živcová, Z. Vlčková, Klimša, L., Lambert, N., Hubík, P., Trémouilles, D., Soltani, A.
Published in MRS advances (01.01.2018)
Published in MRS advances (01.01.2018)
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Journal Article
Preconditioning of p-GaN power HEMT for reproducible Vth measurements
Ghizzo, L., Trémouilles, D., Richardeau, F., Vinnac, S., Moreau, L., Mauran, N.
Published in Microelectronics and reliability (01.05.2023)
Published in Microelectronics and reliability (01.05.2023)
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Journal Article
Accelerated lifetime test of RF-MEMS switches under ESD stress
Ruan, J., Nolhier, N., Papaioannou, G.J., Trémouilles, D., Puyal, V., Villeneuve, C., Idda, T., Coccetti, F., Plana, R.
Published in Microelectronics and reliability (01.09.2009)
Published in Microelectronics and reliability (01.09.2009)
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Journal Article
Conference Proceeding
Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches
Ghizzo, L., Trémouilles, D., Richardeau, F., Vinnac, S., Jamin, F., Guibaud, G.
Published in Microelectronics and reliability (01.11.2023)
Published in Microelectronics and reliability (01.11.2023)
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Journal Article
Transient voltage overshoot in TLP testing – Real or artifact?
Trémouilles, D., Thijs, S., Roussel, Ph, Natarajan, M.I., Vassilev, V., Groeseneken, G.
Published in Microelectronics and reliability (01.07.2007)
Published in Microelectronics and reliability (01.07.2007)
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Journal Article
Conference Proceeding
Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD)
Diatta, M., Bouyssou, E., Trémouilles, D., Martinez, P., Roqueta, F., Ory, O., Bafleur, M.
Published in Microelectronics and reliability (01.09.2009)
Published in Microelectronics and reliability (01.09.2009)
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Journal Article
Conference Proceeding
Characterization and Optimization of Sub-32-nm FinFET Devices for ESD Applications
Thijs, S., Tremouilles, D., Russ, C., Griffoni, A., Collaert, N., Rooyackers, R., Linten, D., Scholz, M., Duvvury, C., Gossner, H., Jurczak, M., Groeseneken, G.
Published in IEEE transactions on electron devices (01.12.2008)
Published in IEEE transactions on electron devices (01.12.2008)
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Journal Article
Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency
Tremouilles, D., Bafleur, M., Bertrand, G., Nolhier, N., Mauran, N., Lescouzeres, L.
Published in IEEE journal of solid-state circuits (01.10.2004)
Published in IEEE journal of solid-state circuits (01.10.2004)
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Journal Article
Conference Proceeding
A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance
Hachem, D., Trémouilles, D., Morancho, F., Toulon, G.
Published in Microelectronics and reliability (01.09.2018)
Published in Microelectronics and reliability (01.09.2018)
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Journal Article
Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology
Bertrand, G., Delage, C., Bafleur, M., Nolhier, N., Dorkel, J.-M., Nguyen, Q., Mauran, N., Tremouilles, D., Perdu, P.
Published in IEEE journal of solid-state circuits (01.09.2001)
Published in IEEE journal of solid-state circuits (01.09.2001)
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Journal Article