Effect of low temperature Ge seed layer and post thermal annealing on quality of Ge1−xSix (0.05 ≤ x ≤ 0.1) graded buffer layers by UHV-CVD
Nguyen, Chi-Lang, Quan, Nguyen Hong, Tran, Binh-Tinh, Su, Yung-Hsuan, Tang, Shih-Hsuan, Luo, Guang-Li, Chang, Edward-Yi
Published in Electronic materials letters (01.07.2014)
Published in Electronic materials letters (01.07.2014)
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High-quality AlN template grown on a patterned Si(111) substrate
Tran, Binh Tinh, Hirayama, Hideki, Jo, Masafumi, Maeda, Noritoshi, Inoue, Daishi, Kikitsu, Tomoka
Published in Journal of crystal growth (15.06.2017)
Published in Journal of crystal growth (15.06.2017)
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Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers
Tinh, Tran Binh, Chang Yi, Edward, Lin, Kung Liang, Luong, Tieng Tung, Yu, Hung Wei, Huang, Man Chi, Chung, Chen Chen, Trinh, Hai Dang, Nguyen, Hong Quan, Nguyen, Chi Lang, Luc, Quang Ho
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Growth and Fabrication of GaN Light Emitting Diode on Patterned-Sapphire Substrate
Tran, Binh Tinh, Ming, Chen-Hauw, Lin, Kung Liang, Chen, Hao-Ming, Wang, Ching Chian, Chen, Chien Chih, Huang, Chih Yung, Chung, Chen Chen, Yi Chang, Edward
Published in ECS transactions (01.04.2013)
Published in ECS transactions (01.04.2013)
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Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
Tran, Binh-Tinh, Chang, Edward-Yi, Trinh, Hai-Dang, Lee, Ching-Ting, Sahoo, Kartika Chandra, Lin, Kung-Liang, Huang, Man-Chi, Yu, Hung-Wei, Luong, Tien-Tung, Chung, Chen-Chen, Nguyen, Chi-Lang
Published in Solar energy materials and solar cells (01.07.2012)
Published in Solar energy materials and solar cells (01.07.2012)
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Growth of GaN films on circle array patterned Si (111) substrates
Lin, Kung-Liang, Tran, Binh Tinh, Chung, Chen-Chen, Chang, Edward-Yi
Published in Journal of crystal growth (01.09.2014)
Published in Journal of crystal growth (01.09.2014)
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Journal Article
Conference Proceeding
Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors
Luc, Quang-Ho, Chang, Edward Yi, Trinh, Hai-Dang, Nguyen, Hong-Quan, Tran, Binh-Tinh, Lin, Yueh-Chin
Published in Japanese Journal of Applied Physics (05.02.2014)
Published in Japanese Journal of Applied Physics (05.02.2014)
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Journal Article
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
Trinh, Hai-Dang, Chang, Edward Yi, Wong, Yuen-Yee, Yu, Chih-Chieh, Chang, Chia-Yuan, Lin, Yueh-Chin, Nguyen, Hong-Quan, Tran, Binh-Tinh
Published in Jpn J Appl Phys (01.11.2010)
Published in Jpn J Appl Phys (01.11.2010)
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Journal Article
Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation
Luong, Tien-Tung, Tran, Binh Tinh, Ho, Yen-Teng, Ha, Minh-Thien-Huu, Hsiao, Yu-Lin, Liu, Shih-Chien, Chiu, Yu-Sheng, Chang, Edward-Yi
Published in Electronic materials letters (01.03.2015)
Published in Electronic materials letters (01.03.2015)
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Journal Article
2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments
Luong, Tien-Tung, Tran, Binh Tinh, Ho, Yen-Teng, Wei, Ting-Wei, Wu, Yue-Han, Yen, Tzu-Chun, Wei, Lin-Lung, Maa, Jer-Shen, Chang, Edward Yi
Published in Electronic materials letters (01.05.2015)
Published in Electronic materials letters (01.05.2015)
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Journal Article
Broadband antireflection sub-wavelength structure of InGaP InGaAs Ge triple junction solar cell with composition-graded SiNx
Chung, Chen-Chen, Lo, Hsiao-Chieh, Lin, Yen-Ku, Yu, Hung-Wei, Tran, Binh Tinh, Lin, Kung- Liang, Chen, Yung Chang, Quan, Nguyen-Hong, Chang, Edward Yi, Tseng, Yuan-Chieh
Published in Materials research express (27.05.2015)
Published in Materials research express (27.05.2015)
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