Drive Current Enhancement in Silicon-on-Quartz MOSFETs
Nakajima, Y., Sasaki, K., Hanajiri, T., Toyabe, T., Sugano, T.
Published in IEEE electron device letters (01.08.2008)
Published in IEEE electron device letters (01.08.2008)
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Journal Article
Confirmation of electric properties of traps at silicon-on-insulator (SOI)/buried oxide (BOX) interface by three-dimensional device simulation
Nakajima, Y, Sasaki, K, Hanajiri, T, Toyabe, T, Morikawa, T, Sugano, T
Published in Physica. E, Low-dimensional systems & nanostructures (01.08.2004)
Published in Physica. E, Low-dimensional systems & nanostructures (01.08.2004)
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Journal Article
Scaling rules for SOI MOSFETs operating in the fully inverted mode
Hanajiri, T., Niizato, M., Aoto, K., Toyabe, T., Nakajima, Y., Morikawa, T., Sugano, T.
Published in Solid-state electronics (01.10.2004)
Published in Solid-state electronics (01.10.2004)
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Journal Article
An approach for quantum mechanical modeling and simulation for MOS devices, covering the whole operation region
Hanajiri, T, Aoto, K, Hoshino, T, Niizato, M, Nakajima, Y, Toyabe, T, Morikawa, T, Sugano, T, Akagi, Y
Published in Computational materials science (01.08.2004)
Published in Computational materials science (01.08.2004)
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Journal Article
Conference Proceeding
Short-channel-effect-suppressed sub-0.1-μm grooved-gate MOSFET's with W gate
KIMURA, S, TANAKA, J, NODA, H, TOYABE, T, IHARA, S
Published in IEEE transactions on electron devices (1995)
Published in IEEE transactions on electron devices (1995)
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Journal Article
Simulation of sub-0.1- mu m MOSFETs with completely suppressed short-channel effect
Tanaka, J., Toyabe, T., Ihara, S., Kimura, S., Noda, H., Itoh, K.
Published in IEEE electron device letters (01.08.1993)
Published in IEEE electron device letters (01.08.1993)
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Journal Article
Synthesis of carbyne analogues by cathodic electrolysis of hexachlorobutadiene
Kijima, M., Toyabe, T., Shirakawa, H., Kawata, S., Kyotani, H., Kyotani, M., Nakamura, Y., Endo, T.
Published in Synthetic metals (28.02.1997)
Published in Synthetic metals (28.02.1997)
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Journal Article
Conference Proceeding
Submicrometer MOSFET structure for minimizing hot-carrier generation
Takeda, E., Kume, H., Toyabe, T., Asai, S.
Published in IEEE transactions on electron devices (01.04.1982)
Published in IEEE transactions on electron devices (01.04.1982)
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Journal Article
A cross section of alpha -particle-induced soft-error phenomena in VLSIs
Takeda, E., Takeuchi, K., Hisamoto, D., Toyabe, T., Ohshima, K., Itoh, K.
Published in IEEE transactions on electron devices (01.11.1989)
Published in IEEE transactions on electron devices (01.11.1989)
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Journal Article
Transmission matrix approach for electron transport in inversion layers
Patil, M.B., Okuyama, Y., Ohkura, Y., Toyabe, T., Ihara, S.
Published in Solid-state electronics (01.07.1994)
Published in Solid-state electronics (01.07.1994)
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Journal Article
On coupling the drift-diffusion and Monte Carlo models for MOSFET simulation
Patil, Mahesh B., Ohkura, Y., Toyabe, T., Ihara, S.
Published in Solid-state electronics (01.04.1995)
Published in Solid-state electronics (01.04.1995)
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Journal Article
Local-Stress-Induced Trap States in SOI Layers With Different Levels of Roughness at SOI/BOX Interfaces
Nakajima, Y, Watanabe, Y, Hanajiri, T, Toyabe, T, Sugano, T
Published in IEEE electron device letters (01.03.2011)
Published in IEEE electron device letters (01.03.2011)
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Journal Article
Three-dimensional device simulator Caddeth with highly convergent matrix solution algorithms
Toyabe, T., Masuda, H., Aoki, Y., Shukuri, H., Hagiwara, T.
Published in IEEE transactions on electron devices (01.10.1985)
Published in IEEE transactions on electron devices (01.10.1985)
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