Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection
Idris, M I, Weng, M H, Peters, A, Siddall, R J, Townsend, N J, Wright, N G, Horsfall, A B
Published in Journal of physics. D, Applied physics (11.12.2019)
Published in Journal of physics. D, Applied physics (11.12.2019)
Get full text
Journal Article
Positive flatband voltage shift in phosphorus doped SiO 2 /N-type 4H-SiC MOS capacitors under high field electron injection
Idris, M I, Weng, M H, Peters, A, Siddall, R J, Townsend, N J, Wright, N G, Horsfall, A B
Published in Journal of physics. D, Applied physics (11.12.2019)
Published in Journal of physics. D, Applied physics (11.12.2019)
Get full text
Journal Article