AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(1 1 1)
Cordier, Yvon, Portail, Marc, Chenot, Sébastien, Tottereau, Olivier, Zielinski, Marcin, Chassagne, Thierry
Published in Journal of crystal growth (01.10.2008)
Published in Journal of crystal growth (01.10.2008)
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Journal Article
Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters
Brault, Julien, Matta, Samuel, Ngo, Thi-Huong, Korytov, Maxim, Rosales, Daniel, Damilano, Benjamin, Leroux, Mathieu, Vennéguès, Philippe, Al Khalfioui, Mohamed, Courville, Aimeric, Tottereau, Olivier, Massies, Jean, Gil, Bernard
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon
Cordier, Yvon, Comyn, Rémi, Tottereau, Olivier, Frayssinet, Eric, Portail, Marc, Nemoz, Maud
Published in Journal of crystal growth (01.02.2019)
Published in Journal of crystal growth (01.02.2019)
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Journal Article
Impact‐induced chemical fractionation as inferred from hypervelocity impact experiments with silicate projectiles and metallic targets
Ganino, Clément, Libourel, Guy, Nakamura, Akiko M., Jacomet, Suzanne, Tottereau, Olivier, Michel, Patrick
Published in Meteoritics & planetary science (01.11.2018)
Published in Meteoritics & planetary science (01.11.2018)
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Journal Article
Ion-induced interdiffusion of surface GaN quantum dots
Rothfuchs, Charlotte, Semond, Fabrice, Portail, Marc, Tottereau, Olivier, Courville, Aimeric, Wieck, Andreas D., Ludwig, Arne
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15.10.2017)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15.10.2017)
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Journal Article
Investigation of Al y Ga1− y N/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters
Brault, Julien, Matta, Samuel, Ngo, Thi Huong, Korytov, Maxim, Rosales, Daniel, Damilano, Benjamin, Leroux, Mathieu, Vennegues, P, Al Khalfioui, M., Courville, A, Tottereau, Olivier, Massies, Jean, Gil, Bernard
Published in Japanese Journal of Applied Physics (17.10.2016)
Published in Japanese Journal of Applied Physics (17.10.2016)
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Journal Article
Investigation of Al y Ga 1− y N/Al 0.5 Ga 0.5 N quantum dot properties for the design of ultraviolet emitters
Brault, Julien, Matta, Samuel, Ngo, Thi-Huong, Korytov, Maxim, Rosales, Daniel, Damilano, Benjamin, Leroux, Mathieu, Vennéguès, Philippe, Al Khalfioui, Mohamed, Courville, Aimeric, Tottereau, Olivier, Massies, Jean, Gil, Bernard
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Growth of GaN based structures on focused ion beam patterned GaN
Cordier, Yvon, Tottereau, Olivier, Nguyen, Lee, Ramdani, Mohammed Réda, Soltani, Ali, Boucherit, Mohamed, Troadec, David, Lo, Fang-Yuh, Hu, Y.Y., Ludwig, Arne, Wieck, Andreas D
Published in Physica status solidi. C (2011)
Published in Physica status solidi. C (2011)
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Journal Article
Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns
Cordier, Y., Semond, F., Moreno, J-C., Frayssinet, E., Benbakhti, B., Cao, Z., Chenot, S., Nguyen, L., Tottereau, O., Soltani, A., Blary, K.
Published in Materials science in semiconductor processing (01.02.2009)
Published in Materials science in semiconductor processing (01.02.2009)
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Journal Article
Conference Proceeding
Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates
Cordier, Yvon, Chenot, Sébastien, Laügt, Marguerite, Tottereau, Olivier, Joblot, Sylvain, Semond, Fabrice, Massies, Jean, Di Cioccio, Léa, Moriceau, Hubert
Published in Physica status solidi. C (01.06.2007)
Published in Physica status solidi. C (01.06.2007)
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Journal Article