Extreme reduction of on-resistance in vertical GaN p-n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Imanishi, Masayuki, Yoshimura, Masashi, Asai, Naomi, Ohta, Hiroshi, Mishima, Tomoyoshi, Mori, Yusuke
Published in Applied physics express (01.07.2020)
Published in Applied physics express (01.07.2020)
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Journal Article
Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method
Shimizu, Ayumu, Kitamoto, Akira, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Usami, Shigeyoshi, Imanishi, Masayuki, Maruyama, Mihoko, Yoshimura, Masashi, Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke
Published in Journal of crystal growth (01.03.2022)
Published in Journal of crystal growth (01.03.2022)
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Journal Article
Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Nobuoka, Masaki, Kitamoto, Akira, Imanishi, Msayuki, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.09.2021)
Published in Japanese Journal of Applied Physics (01.09.2021)
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Journal Article
Influence of oxygen-related defects on the electronic structure of GaN
Ohata, Satoshi, Kawamura, Takahiro, Akiyama, Toru, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke, Sumi, Tomoaki, Takino, Junichi
Published in Japanese Journal of Applied Physics (01.06.2022)
Published in Japanese Journal of Applied Physics (01.06.2022)
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Journal Article
Effect of methane additive on GaN growth using the OVPE method
Kitamoto, Akira, Takino, Junichi, Sumi, Tomoaki, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Gunji, Yoshikazu, Imanishi, Masayuki, Okayama, Yoshio, Nobuoka, Masaki, Isemura, Masashi, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3
Imade, Mamoru, Bu, Yuan, Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Sasaki, Takatomo, Imsemura, Masashi, Mori, Yusuke
Published in Journal of crystal growth (01.07.2012)
Published in Journal of crystal growth (01.07.2012)
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Journal Article
Conference Proceeding
Dependence of polarity inversion on V/III ratio in −c-GaN growth by oxide vapor phase epitaxy
Taniyama, Yuki, Yamaguchi, Yohei, Takatsu, Hiroaki, Sumi, Tomoaki, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (07.04.2015)
Published in Japanese Journal of Applied Physics (07.04.2015)
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Journal Article
Origin of Black Color in Heavily Doped n‐Type GaN Crystal
Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke
Published in physica status solidi (b) (16.03.2024)
Published in physica status solidi (b) (16.03.2024)
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Journal Article
Dramatic increase in the growth rate of GaN layers grown from Ga2O vapor by epitaxial growth on HVPE-GaN substrates with a well-prepared surface
Bu, Yuan, Kitamoto, Akira, Takatsu, Hiroaki, Juta, Masami, Sumi, Tomoaki, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Applied physics express (07.03.2014)
Published in Applied physics express (07.03.2014)
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Journal Article
Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2015)
Published in Japanese Journal of Applied Physics (01.06.2015)
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Journal Article
Corrigendum to “Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3” [Journal of Crystal Growth 350 (2012) 56–59]
Imade, Mamoru, Bu, Yuan, Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Sasaki, Takatomo, Isemura, Masashi, Mori, Yusuke
Published in Journal of crystal growth (01.10.2012)
Published in Journal of crystal growth (01.10.2012)
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Journal Article
Homoepitaxial growth of a-plane GaN layers by reaction between Ga sub(2) O vapor and NH sub(3) gas
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2015)
Published in Japanese Journal of Applied Physics (01.06.2015)
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Journal Article
Homoepitaxial growth of a -plane GaN layers by reaction between Ga 2 O vapor and NH 3 gas
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2015)
Published in Japanese Journal of Applied Physics (01.06.2015)
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Journal Article
Growth of GaN layers using Ga sub(2) O vapor obtained from Ga and H sub(2) O vapor
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.05.2015)
Published in Japanese Journal of Applied Physics (01.05.2015)
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Journal Article