Search Results - "Tomoaki Hatayama, Tomoaki Hatayama" :: K.UTB vyhledávací portál

Epitaxial p-type SiC as a self-driven photocathode for water splitting

by KATO, Masashi, YASUDA, Tomonari, MIYAKE, Keiko, ICHIMURA, Masaya, HATAYAMA, Tomoaki
Published in International journal of hydrogen energy (26.03.2014)

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Spectral response, carrier lifetime, and photocurrents of SiC photocathodes

by Kato, Masashi, Miyake, Keiko, Yasuda, Tomonari, Ichimura, Masaya, Hatayama, Tomoaki, Ohshima, Takeshi
Published in Japanese Journal of Applied Physics (01.01.2016)

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Low-temperature photoluminescence of 8H-SiC homoepitaxial layer

by Hatayama, Tomoaki, Henry, Anne, Yano, Hiroshi, Fuyuki, Takashi
Published in Japanese Journal of Applied Physics (01.02.2016)

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Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching

by Koketsu, Hidenori, Hatayama, Tomoaki, Yano, Hiroshi, Fuyuki, Takashi
Published in Japanese Journal of Applied Physics (01.05.2012)

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Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment

by Tamaso, Hideto, Kyogoku, Shinaya, Masuda, Takeyoshi, Fukuda, Kenji, Hatayama, Tomoaki, Kitai, Hidenori, Harada, Shinsuke, Shiomi, Hiromu
Published in Materials Science Forum (24.05.2016)

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Enhancements of photoluminescence intensity in high-quality floating-zone Si by thermal annealing in vacuum

by Kataoka, Keita, Hattori, Ken, Yamamoto, Aishi, Hattori, Azusa Nakamoto, Hatayama, Tomoaki, Kimoto, Yasuji, Endo, Katsuyoshi, Fuyuki, Takashi, Daimon, Hiroshi
Published in Japanese Journal of Applied Physics (01.11.2016)

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Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal--Oxide--Semiconductor Field-Effect Transistors on Off-Axis Substrates

by Ueoka, Yoshihiro, Shingu, Kenta, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi
Published in Japanese Journal of Applied Physics (01.11.2012)

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Hot Carrier Effects in Low-Temperature Polysilicon Thin-Film Transistors

by Yukiharu Uraoka, Yukiharu Uraoka, Tomoaki Hatayama, Tomoaki Hatayama, Takashi Fuyuki, Takashi Fuyuki, Tetsuya Kawamura, Tetsuya Kawamura, Yuji Tsuchihashi, Yuji Tsuchihashi
Published in Japanese Journal of Applied Physics (01.04.2001)

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Analysis of Anomalous Charge-Pumping Characteristics on 4H-SiC MOSFETs

by Okamoto, D., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T.
Published in IEEE transactions on electron devices (01.08.2008)

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Single Etch-Pit Shape on Off-Angled 4H-SiC(0001) Si-Face Formed by Chlorine Trifluoride

by Hatayama, Tomoaki, Tamura, Tetsuya, Yano, Hiroshi, Fuyuki, Takashi
Published in Japanese Journal of Applied Physics (01.07.2012)

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Single Etch-Pit Shape on Off-Angled 4H-SiC(0001) Si-Face Formed by Chlorine Trifluoride

by Hatayama, Tomoaki, Tamura, Tetsuya, Yano, Hiroshi, Fuyuki, Takashi
Published in Japanese Journal of Applied Physics (01.07.2012)

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$NH3 Plasma Pretreatment of 4H-SiC($000\bar{1}$) Surface for Reduction of Interface States in Metal--Oxide--Semiconductor Devices$

NH3 Plasma Pretreatment of 4H-SiC($000\bar{1}$) Surface for Reduction of Interface States in Metal--Oxide--Semiconductor Devices

by Iwasaki, Yoshinori, Yano, Hiroshi, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi
Published in Applied physics express (01.02.2010)

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Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching

by Koketsu, Hidenori, Hatayama, Tomoaki, Yano, Hiroshi, Fuyuki, Takashi
Published in Japanese Journal of Applied Physics (01.05.2012)

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Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal–Oxide–Semiconductor Field-Effect Transistors on Off-Axis Substrates

by Ueoka, Yoshihiro, Shingu, Kenta, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi
Published in Japanese Journal of Applied Physics (01.11.2012)

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Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node

by Miura, Atsushi, Hikono, Takio, Matsumura, Takashi, Yano, Hiroshi, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi, Yoshii, Shigeo, Yamashita, Ichiro
Published in Japanese Journal of Applied Physics (01.01.2006)

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Reliability of High-Frequency Operation of Low-Temperature Polysilicon Thin Film Transistors under Dynamic Stress

by Yukiharu Uraoka, Yukiharu Uraoka, Tomoaki Hatayama, Tomoaki Hatayama, Takashi Fuyuki, Takashi Fuyuki, Tetsuya Kawamura, Tetsuya Kawamura, Yuji Tsuchihashi, Yuji Tsuchihashi
Published in Japanese Journal of Applied Physics (01.12.2000)

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Thermal Etching of 4H-SiC(0001) Si Faces in the Mixed Gas of Chlorine and Oxygen

by Hatayama, Tomoaki, Shimizu, Tomoya, Kouketsu, Hidenori, Yano, Hiroshi, Uraoka, Yukiharu, Fuyuki, Takashi
Published in Japanese Journal of Applied Physics (01.06.2009)

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