Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation
Evtikhiev, V P, Boiko, A M, Kudryashov, I V, Kryganovskii, A K, Suris, R A, Titkov, A N, Tokranov, V E
Published in Semiconductor science and technology (01.06.2002)
Published in Semiconductor science and technology (01.06.2002)
Get full text
Journal Article
Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer
Bolotov, L. N., Nakamura, A., Evtikhiev, V. P., Tokranov, V. E., Titkov, A. N.
Published in Surface and interface analysis (01.05.1999)
Published in Surface and interface analysis (01.05.1999)
Get full text
Journal Article
Conference Proceeding
Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(0 0 1) vicinal surfaces
Martini, S, Quivy, A.A, Ugarte, D, Lange, C, Richter, W, Tokranov, V.E
Published in Journal of crystal growth (01.07.2001)
Published in Journal of crystal growth (01.07.2001)
Get full text
Journal Article
Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region
Evtikhiev, V. P., Kudryashov, I. V., Kotel’nikov, E. Yu, Tokranov, V. E., Titkov, A. N., Tarasov, I. S., Alferov, Zh. I.
Published in Semiconductors (Woodbury, N.Y.) (01.12.1998)
Published in Semiconductors (Woodbury, N.Y.) (01.12.1998)
Get full text
Journal Article
Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
Evtikhiev, V. P., Tokranov, V. E., Kryzhanovskii, A. K., Boiko, A. M., Suris, R. A., Titkov, A. N., Nakamura, A., Ichida, M.
Published in Semiconductors (Woodbury, N.Y.) (01.07.1998)
Published in Semiconductors (Woodbury, N.Y.) (01.07.1998)
Get full text
Journal Article
Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry
Evtikhiev, V. P., Kotel’nikov, E. Yu, Kudryashov, I. V., Tokranov, V. E., Faleev, N. N.
Published in Semiconductors (Woodbury, N.Y.) (01.05.1999)
Published in Semiconductors (Woodbury, N.Y.) (01.05.1999)
Get full text
Journal Article
Investigation of carrier transport in a system of undoped quantum wells under pulsed excitation
Georgievskii, A. M., Solov’ev, V. A., Ryvkin, B. S., Strugov, N. A., Kotel’nikov, E. Yu, Tokranov, V. E., Shik, A. Ya
Published in Semiconductors (Woodbury, N.Y.) (01.04.1997)
Published in Semiconductors (Woodbury, N.Y.) (01.04.1997)
Get full text
Journal Article
Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation
EVTIKHIEV, V. P, BOIKO, A. M, KUDRYASHOV, I. V, KRYGANOVSKII, A. K, SURIS, R. A, TITKOV, A. N, TOKRANOV, V. E
Published in Semiconductor science and technology (2002)
Get full text
Published in Semiconductor science and technology (2002)
Journal Article
Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces
MARTINI, S, QUIVY, A. A, UGARTE, D, LANGE, C, RICHTER, W, TOKRANOV, V. E
Published in Journal of crystal growth (2001)
Get full text
Published in Journal of crystal growth (2001)
Conference Proceeding