Search Results - "Togo, Mitsuhiro" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

(Invited) Stress Techniques in Advanced Transistor Architectures: Bulk FinFETs and Implant-Free Quantum Well Transistors

(Invited) Stress Techniques in Advanced Transistor Architectures: Bulk FinFETs and Implant-Free Quantum Well Transistors

by Eneman, Geert, Witters, Liesbeth, Collaert, Nadine, Mitard, Jerome, Hellings, Geert, Yamaguchi, Shinpei, De Keersgieter, An, Hikavyy, Andriy, Vincent, Benjamin, Favia, Paola, Bender, Hugo, Veloso, Anabela, Chiarella, Thomas, Togo, Mitsuhiro, Loo, Roger, De Meyer, Kristin, Mercha, Abdelkarim, Horiguchi, Naoto, Thean, Aaron
Published in ECS transactions (27.04.2012)

Get full text

Journal Article

Effects of Selecting Channel Direction in Improving Performance of Sub-100 nm MOSFETs Fabricated on (110) Surface Si Substrate

Effects of Selecting Channel Direction in Improving Performance of Sub-100 nm MOSFETs Fabricated on (110) Surface Si Substrate

by Nakamura, Hidetatsu, Ezaki, Tatsuya, Iwamoto, Toshiyuki, Togo, Mitsuhiro, Ikezawa, Takeo, Ikarashi, Nobuyuki, Hane, Masami, Yamamoto, Toyoji
Published in Japanese Journal of Applied Physics (2004)

Get full text

Journal Article

METHOD FOR PROVIDING GATE METAL LAYER OF TRANSISTOR DEVICE, AND ASSOCIATED TRANSISTOR

METHOD FOR PROVIDING GATE METAL LAYER OF TRANSISTOR DEVICE, AND ASSOCIATED TRANSISTOR

by TOGO MITSUHIRO
Year of Publication 20.11.2014

Get full text

Patent

High voltage field effect transistor with vertical current paths and method of making the same

High voltage field effect transistor with vertical current paths and method of making the same

by Togo, Mitsuhiro
Year of Publication 07.05.2024

Get full text

Patent

Wafer Level Variability Improvement by Spatial Source/Drain Activation and Ion Implantation Super Scan for FinFET Technology

Wafer Level Variability Improvement by Spatial Source/Drain Activation and Ion Implantation Super Scan for FinFET Technology

by Wang, Yanzhen, Yong, Yoong Hooi, Liu, Bingwu, Zhou, Dibao, Togo, Mitsuhiro, Choi, Dongil, Lee, Jae Gon, Lo, Hsien-Ching, Dou, Xinyuan, Gu, Sipeng, Shintri, Shashidhar, Tong, Weihua, Sargunas, Vidmantas, Argandona, Jorge
Published in IEEE transactions on semiconductor manufacturing (01.08.2018)

Get full text

Journal Article

Negative Bias Temperature Instability in p-FinFETs With 45 ^ Substrate Rotation

Negative Bias Temperature Instability in p-FinFETs With 45 ^ Substrate Rotation

by Moonju Cho, Ritzenthaler, Romain, Krom, Raymond, Higuchi, Yuichi, Kaczer, Ben, Chiarella, Thomas, Boccardi, Guillaume, Togo, Mitsuhiro, Horiguchi, Naoto, Kauerauf, Thomas, Groeseneken, Guido
Published in IEEE electron device letters (01.10.2013)

Get full text

Journal Article

High voltage field effect transistor with vertical current paths and method of making the same

High voltage field effect transistor with vertical current paths and method of making the same

by Togo, Mitsuhiro
Year of Publication 20.09.2022

Get full text

Patent

HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AND METHOD OF MAKING THE SAME

HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AND METHOD OF MAKING THE SAME

by TOGO, Mitsuhiro
Year of Publication 07.04.2022

Get full text

Patent

HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AND METHOD OF MAKING THE SAME

HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AND METHOD OF MAKING THE SAME

by TOGO, Mitsuhiro
Year of Publication 07.04.2022

Get full text

Patent

Transistors with stepped contact via structures and methods of forming the same

Transistors with stepped contact via structures and methods of forming the same

by Togo, Mitsuhiro, Nakatsuji, Hiroshi
Year of Publication 05.12.2023

Get full text

Patent

Repair of electromigration-induced voids in aluminum interconnection by current reversal

Repair of electromigration-induced voids in aluminum interconnection by current reversal

by CHAO-FU HONG, TOGO, M, HOH, K
Published in Japanese Journal of Applied Physics (1993)

Get full text

Journal Article

Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs

Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs

by Jin Ju Kim, Moonju Cho, Pantisano, L., Ukjin Jung, Young Gon Lee, Chiarella, T., Togo, M., Horiguchi, N., Groeseneken, G., Byoung Hun Lee
Published in IEEE electron device letters (01.07.2012)

Get full text

Journal Article

Influence of grain boundary configuration in aluminum films on abrupt resistance changes during electromigration

Influence of grain boundary configuration in aluminum films on abrupt resistance changes during electromigration

by CHAO-FU HONG, TOGO, M, HOH, K
Published in Japanese Journal of Applied Physics (15.02.1993)

Get full text

Journal Article

TRANSISTORS WITH STEPPED CONTACT VIA STRUCTURES AND METHODS OF FORMING THE SAME

TRANSISTORS WITH STEPPED CONTACT VIA STRUCTURES AND METHODS OF FORMING THE SAME

by TOGO, Mitsuhiro, NAKATSUJI, Hiroshi
Year of Publication 29.12.2022

Get full text

Patent

Method for providing a gate metal layer of a transistor device

Method for providing a gate metal layer of a transistor device

by Togo, Mitsuhiro
Year of Publication 28.08.2019

Get full text

Patent

Orientation Dependence of Si 1-x C x :P Growth and the Impact on FinFET Structures

Orientation Dependence of Si 1-x C x :P Growth and the Impact on FinFET Structures

by Tolle, John, Weeks, K. Doran, Bauer, Matthias, Machkaoutsan, Vladimir, Maes, Jan Willem, Togo, Mitsuhiro, Brus, Stephan, Hikavyy, Andriy, Loo, Roger
Published in ECS transactions (15.03.2013)

Get full text

Journal Article

(Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI)

(Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI)

by Triyoso, Dina, Carter, Rick, Kluth, Jon, Luning, Scott, Child, Amy, Wahl, Jeremy, Mulfinger, Bob, Punchihewa, Kasun, Kumar, Anil, Kang, Laegu, Sporer, Ryan, Chen, Xiaobo, Straub, Sherry, Bohra, Girish, Patil, Suraj, Zhang, Xing, Chen, Alex, Togo, Mitsuhiro, Pal, Rohit
Published in ECS transactions (08.09.2015)

Get full text

Journal Article

Field effect transistors with gate fins and method of making the same

Field effect transistors with gate fins and method of making the same

by Kobayashi, Takashi, Togo, Mitsuhiro, Narayanan, Sudarshan
Year of Publication 18.06.2024

Get full text

Patent

Field effect transistors with gate fins and method of making the same

Field effect transistors with gate fins and method of making the same

by Kobayashi, Takashi, Togo, Mitsuhiro, Narayanan, Sudarshan
Year of Publication 23.04.2024

Get full text

Patent

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A METAL OXIDE ETCH STOP LAYER AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A METAL OXIDE ETCH STOP LAYER AND METHODS FOR FORMING THE SAME

by Toyama, Fumiaki, RAJASHEKHAR, Adarsh, Togo, Mitsuhiro
Year of Publication 30.11.2023

Get full text

Patent

1
2
3
4
5
6
7
8
Next
[8]