Influence of surface melt flow on oxygen inhomogeneity in Czochralski-grown silicon single crystal : studied by double-layered Czochralski (DLCZ) melt quenching technique
KAWANISHI, S, TOGAWA, S, IZUNOME, K, TERASHIMA, K, KIMURA, S
Published in Japanese Journal of Applied Physics (1995)
Published in Japanese Journal of Applied Physics (1995)
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METHOD FOR PRODUCING SILICON SINGLE CRYSTAL HAVING NO FLAW
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Year of Publication 27.09.2001
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Year of Publication 27.09.2001
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GROWTH OF SILICON SINGLE CRYSTAL FROM MELT HAVING EXTRAORDINARY EDDY FLOWS ON ITS SURFACE
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Year of Publication 01.09.2000
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Year of Publication 01.09.2000
Patent