Detection of Stress-Induced Interface Trap Generation on High- k Gated nMOSFETs in Real Time by Stress-and-Sense Charge Pumping Technique
Lu, Chun-Chang, Chang-Liao, Kuei-Shu, Tsai, Fu-Huan, Li, Chen-Chien, Wang, Tien-Ko
Published in IEEE transactions on electron devices (01.05.2015)
Published in IEEE transactions on electron devices (01.05.2015)
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Journal Article
Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High- k Gated MOSFETs by a Modified Charge Pumping Technique
Lu, Chun-Chang, Chang-Liao, Kuei-Shu, Tsao, Che-Hao, Wang, Tien-Ko, Ko, Hsueh-Chao, Hsu, Yao-Tung
Published in IEEE transactions on electron devices (01.04.2014)
Published in IEEE transactions on electron devices (01.04.2014)
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Journal Article
Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel
Fu, Chung-Hao, Chang-Liao, Kuei-Shu, Liu, Li-Jung, Hsieh, Hsiao-Chi, Lu, Chun-Chang, Li, Chen-Chien, Wang, Tien-Ko, Heh, Da-Wei
Published in IEEE electron device letters (01.02.2012)
Published in IEEE electron device letters (01.02.2012)
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Journal Article
Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer
Ping-Hung Tsai, Kuei-Shu Chang-Liao, Chu-Yung Liu, Tien-Ko Wang, Tzeng, P.J., Lin, C.H., Lee, L.S., Tsai, M.-J.
Published in IEEE electron device letters (01.03.2008)
Published in IEEE electron device letters (01.03.2008)
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Journal Article
Effects of interstitial oxygen defects at HfOxNy/Si interface on electrical characteristics of MOS devices
CHENG, Chin-Lung, LU, Chun-Yuan, CHANG-LIAO, Kuei-Shu, HUANG, Ching-Hung, WANG, Sheng-Hung, WANG, Tien-Ko
Published in IEEE transactions on electron devices (2006)
Published in IEEE transactions on electron devices (2006)
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Electrical Degradation and Recovery of Low-Temperature Polycrystalline Silicon Thin-Film Transistors in Polycrystalline Silicon Plasma Process
CHANG, Jiun-Jye, CHANG-LIAO, Kuei-Shu, WANG, Tien-Ko, WU, Yung-Chun, LIN, Kao-Chao, CHEN, Chia-Yu, CHEN, Yu-Mou, TSENG, Jen-Pei, HUNG, Min-Feng
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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Electrical Characteristics and Thermal Stability of [Formula Omitted] Metal Gate Electrode for Advanced MOS Devices
Chang-Ta Yang, Chang-Ta Yang, Kuei-Shu Chang-Liao, Kuei-Shu Chang-Liao, Hsin-Chun Chang, Hsin-Chun Chang, Chung-Hao Fu, Chung-Hao Fu, Tien-Ko Wang, Tien-Ko Wang, Wen-Fa Tsai, Wen-Fa Tsai, Chi-Fong Ai, Chi-Fong Ai, Wen-Fa Wu, Wen-Fa Wu
Published in IEEE transactions on electron devices (01.11.2008)
Published in IEEE transactions on electron devices (01.11.2008)
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Journal Article
Reliability and Thermal Stability of Clustered Vertical Furnace-Grown SiO2 With HfxTayN Metal Gate for Advanced MOS Device Application
Kuei-Shu Chang-Liao, Kuei-Shu Chang-Liao, Chin-Lung Cheng, Chin-Lung Cheng, Chun-Yuan Lu, Chun-Yuan Lu, Bhabani Shankar Sahu, Bhabani Shankar Sahu, Tzu-Chen Wang, Tzu-Chen Wang, Tien-Ko Wang, Tien-Ko Wang, Shang-Feng Huang, Shang-Feng Huang, Wen-Fa Tsai, Wen-Fa Tsai, Chi-Fong Ai, Chi-Fong Ai
Published in IEEE transactions on electron devices (01.02.2007)
Published in IEEE transactions on electron devices (01.02.2007)
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Journal Article
Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeOx Interfacial Layer Formed by In Situ Desorption
LI, Chen-Chien, CHANG-LIAO, Kuei-Shu, LIU, Li-Jung, LEE, Tzu-Min, FU, Chung-Hao, CHEN, Ting-Ching, CHENG, Jen-Wei, LU, Chun-Chang, WANG, Tien-Ko
Published in IEEE electron device letters (01.05.2014)
Published in IEEE electron device letters (01.05.2014)
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Journal Article
Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection
Liu, Li-Jung, Chang-Liao, Kuei-Shu, Jian, Yi-Chuen, Wang, Tien-Ko, Tsai, Ming-Jinn
Published in Thin solid films (30.04.2013)
Published in Thin solid films (30.04.2013)
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Journal Article
Conference Proceeding
Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition
Li, Chen-Chien, Chang-Liao, Kuei-Shu, Fu, Chung-Hao, Hsieh, Tsung-Lin, Chen, Li-Ting, Liao, Yu-Liang, Lu, Chun-Chang, Wang, Tien-Ko
Published in Microelectronic engineering (01.09.2013)
Published in Microelectronic engineering (01.09.2013)
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Journal Article
Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in Interfacial Layer Formed by In Situ Desorption
Li, Chen-Chien, Chang-Liao, Kuei-Shu, Liu, Li-Jung, Lee, Tzu-Min, Fu, Chung-Hao, Chen, Ting-Ching, Cheng, Jen-Wei, Lu, Chun-Chang, Wang, Tien-Ko
Published in IEEE electron device letters (01.05.2014)
Published in IEEE electron device letters (01.05.2014)
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Journal Article
Low inversion equivalent oxide thickness and enhanced mobility in MOSFETs with chlorine plasma interface engineering
Li, Chen-Chien, Chang-Liao, Kuei-Shu, Chen, Li-Ting, Fu, Chung-Hao, Hong, Hao-Zhi, Li, Mong-Chi, Chi, Wei-Fong, Lu, Chun-Chang, Ye, Zong-Hao, Wang, Tien-Ko
Published in Solid-state electronics (01.11.2014)
Published in Solid-state electronics (01.11.2014)
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Journal Article
Conference Proceeding
Charge-Trapping-Type Flash Memory Device With Stacked High- k Charge-Trapping Layer
Ping-Hung Tsai, Kuei-Shu Chang-Liao, Te-Chiang Liu, Tien-Ko Wang, Pei-Jer Tzeng, Cha-Hsin Lin, Lee, L.S., Ming-Jinn Tsai
Published in IEEE electron device letters (01.07.2009)
Published in IEEE electron device letters (01.07.2009)
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