Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin Channel
LIN, Horng-Chih, LIN, Cheng-I, HUANG, Tiao-Yuan
Published in IEEE electron device letters (01.01.2012)
Published in IEEE electron device letters (01.01.2012)
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Journal Article
Improving Electrical Performances of p -Type SnO Thin-Film Transistors Using Double-Gated Structure
Zhong, Chia-Wen, Lin, Horng-Chih, Liu, Kou-Chen, Huang, Tiao-Yuan
Published in IEEE electron device letters (01.10.2015)
Published in IEEE electron device letters (01.10.2015)
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Journal Article
High-Performance Submicrometer ZnON Thin-Film Transistors With Record Field-Effect Mobility
Kuan, Chin-I, Lin, Horng-Chih, Li, Pei-Wen, Huang, Tiao-Yuan
Published in IEEE electron device letters (01.03.2016)
Published in IEEE electron device letters (01.03.2016)
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Journal Article
Fabrication of High-Performance ZnO Thin-Film Transistors With Submicrometer Channel Length
LIN, Horng-Chih, LYU, Rong-Jhe, HUANG, Tiao-Yuan
Published in IEEE electron device letters (01.09.2013)
Published in IEEE electron device letters (01.09.2013)
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Journal Article
Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations
Hsu, Hsing-Hui, Liu, Ta-Wei, Chan, Leng, Lin, Chuan-Ding, Huang, Tiao-Yuan, Lin, Horng-Chih
Published in IEEE transactions on electron devices (01.11.2008)
Published in IEEE transactions on electron devices (01.11.2008)
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Journal Article
Implementation of Film Profile Engineering in the Fabrication of ZnO Thin-Film Transistors
Lyu, Rong-Jhe, Lin, Horng-Chih, Huang, Tiao-Yuan
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
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Journal Article
Film-Profile Engineered InGaZnO Thin-Film Transistors With Self-Aligned Bottom Gates
Bo-Shiuan Shie, Horng-Chih Lin, Tiao-Yuan Huang
Published in IEEE electron device letters (01.08.2015)
Published in IEEE electron device letters (01.08.2015)
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Journal Article
A Novel Charge-Trapping-Type Memory With Gate-All-Around Poly-Si Nanowire and HfAlO Trapping Layer
LEE, Ko-Hui, LIN, Horng-Chih, HUANG, Tiao-Yuan
Published in IEEE electron device letters (01.03.2013)
Published in IEEE electron device letters (01.03.2013)
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Journal Article
Novel poly-silicon nanowire field effect transistor for biosensing application
Hsiao, Cheng-Yun, Lin, Chih-Heng, Hung, Cheng-Hsiung, Su, Chun-Jung, Lo, Yen-Ren, Lee, Cheng-Che, Lin, Horng-Chin, Ko, Fu-Hsiang, Huang, Tiao-Yuan, Yang, Yuh-Shyong
Published in Biosensors & bioelectronics (2009)
Published in Biosensors & bioelectronics (2009)
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Journal Article
Conference Proceeding
Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact
Kun-Ming Chen, Bo-Yuan Chen, Chia-Sung Chiu, Guo-Wei Huang, Chun-Hao Chen, Horng-Chih Lin, Tiao-Yuan Huang, Ming-Yi Chen, Yu-Chi Yang, Jaw, Brenda, Kai-Li Wang
Published in IEEE electron device letters (01.09.2013)
Published in IEEE electron device letters (01.09.2013)
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Journal Article
Characterization of AC Hot-Carrier Effects in Poly-Si Thin-Film Transistors
LIN, Horng-Chih, CHANG, Kai-Hsiang, HUANG, Tiao-Yuan
Published in IEEE transactions on electron devices (01.11.2009)
Published in IEEE transactions on electron devices (01.11.2009)
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Journal Article
Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor
Lin, Chih-Heng, Hsiao, Cheng-Yun, Hung, Cheng-Hsiung, Lo, Yen-Ren, Lee, Cheng-Che, Su, Chun-Jung, Lin, Horng-Chin, Ko, Fu-Hsiang, Huang, Tiao-Yuan, Yang, Yuh-Shyong
Published in Chemical communications (Cambridge, England) (01.01.2008)
Published in Chemical communications (Cambridge, England) (01.01.2008)
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Journal Article
Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistors
Zhong, Chia-Wen, Lin, Horng-Chih, Tsai, Jung-Ruey, Liu, Kou-Chen, Huang, Tiao-Yuan
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
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Journal Article
A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method Part II: Study of the Intra-Nitride Behaviors and Reliability of SONOS-Type Devices
Pei-Ying Du, Hang-Ting Lue, Szu-Yu Wang, Tiao-Yuan Huang, Kuang-Yeu Hsieh, Liu, R., Chih-Yuan Lu
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article