Misfit dislocations in In-rich InGaN/GaN quantum well structures
Costa, P. M. F. J., Datta, R., Kappers, M. J., Vickers, M. E., Humphreys, C. J., Graham, D. M., Dawson, P., Godfrey, M. J., Thrush, E. J., Mullins, J. T.
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
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Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures
Zhu, D., Kappers, M.J., McAleese, C., Graham, D.M., Chabrol, G.R., Hylton, N.P., Dawson, P., Thrush, E.J., Humphreys, C.J.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Structural properties of ultrathin InGaN/GaN quantum wells
Sahonta, S.-L., Komninou, Ph, Dimitrakopulos, G. P., Salcianu, C., Thrush, E. J., Karakostas, Th
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
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Exciton localization in InGaN/GaN single quantum well structures
Graham, D. M., Vala, A. Soltani, Dawson, P., Godfrey, M. J., Kappers, M. J., Smeeton, T. M., Barnard, J. S., Humphreys, C. J., Thrush, E. J.
Published in Physica Status Solidi (b) (01.11.2003)
Published in Physica Status Solidi (b) (01.11.2003)
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Towards a better understanding of trench defects in InGaN/GaN quantum wells
Massabuau, F C-P, Trinh-Xuan, L, Lodié, D, Sahonta, S-L, Rhode, S, Thrush, E J, Oehler, F, Kappers, M J, Humphreys, C J, Oliver, R A
Published in Journal of physics. Conference series (29.11.2013)
Published in Journal of physics. Conference series (29.11.2013)
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A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers
Zhu, D., Kappers, M. J., Costa, P. M. F. J., McAleese, C., Rayment, F. D. G., Chabrol, G. R., Graham, D. M., Dawson, P., Thrush, E. J., Mullins, J. T., Humphreys, C. J.
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
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High quantum efficiency InGaN/GaN structures emitting at 540 nm
Graham, D. M., Dawson, P., Godfrey, M. J., Kappers, M. J., Costa, P. M. F. J., Vickers, M. E., Datta, R., Humphreys, C. J., Thrush, E. J.
Published in Physica status solidi. C (01.06.2006)
Published in Physica status solidi. C (01.06.2006)
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Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates
Gibbon, M, Stagg, J P, Cureton, C G, Thrush, E J, Jones, C J, Mallard, R E, Pritchard, R E, Collis, N, Chew, A
Published in Semiconductor science and technology (02.06.1993)
Published in Semiconductor science and technology (02.06.1993)
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Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design
Pawlowski, R.P, Theodoropoulos, C, Salinger, A.G, Mountziaris, T.J, Moffat, H.K, Shadid, J.N, Thrush, E.J
Published in Journal of crystal growth (01.12.2000)
Published in Journal of crystal growth (01.12.2000)
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Material optimisation for AlGaN/GaN HFET applications
Bougrioua, Z., Moerman, I., Sharma, N., Wallis, R.H., Cheyns, J., Jacobs, K., Thrush, E.J., Considine, L., Beanland, R., Farvacque, J.-L., Humphreys, C.
Published in Journal of crystal growth (01.09.2001)
Published in Journal of crystal growth (01.09.2001)
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Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures
Harris, J J, Lee, K J, Wang, T, Sakai, S, Bougrioua, Z, Moerman, I, Thrush, E J, Webb, J B, Tang, H, Martin, T, Maude, D K, Portal, J-C
Published in Semiconductor science and technology (01.05.2001)
Published in Semiconductor science and technology (01.05.2001)
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Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors
Dauelsberg, M., Martin, C., Protzmann, H., Boyd, A.R., Thrush, E.J., Käppeler, J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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GaN/InGaN quantum wells grown in a close coupled showerhead reactor
Thrush, E.J., Kappers, M.J., Dawson, P., Vickers, M.E., Barnard, J., Graham, D., Makaronidis, G., Rayment, F.D.G., Considine, L., Humphreys, C.J.
Published in Journal of crystal growth (01.02.2003)
Published in Journal of crystal growth (01.02.2003)
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Studies of efficiency droop in GaN based LEDs
Phillips, W. A., Thrush, E. J., Zhang, Y., Humphreys, C. J.
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Towards a better understanding of trench defects in InGaN/GaN quantum wells
Trinh-Xuan, L, Lodié, D, S-L Sahonta, Rhode, S, Thrush, E J, Oehler, F, Kappers, M J, Humphreys, C J, Oliver, R A
Published in Journal of physics. Conference series (01.01.2013)
Published in Journal of physics. Conference series (01.01.2013)
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Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
Stafford, A, Irvine, S.J.C, Bougrioua, Z, Jacobs, K, Moerman, I, Thrush, E.J, Considine, L
Published in Journal of crystal growth (01.12.2000)
Published in Journal of crystal growth (01.12.2000)
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Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor
Martin, C., Dauelsberg, M., Protzmann, H., Boyd, A.R., Thrush, E.J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V.
Published in Journal of crystal growth (01.05.2007)
Published in Journal of crystal growth (01.05.2007)
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Study of GaN and InGaN films grown by metalorganic chemical vapour deposition
Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J.A, Thrush, E.J.
Published in Journal of crystal growth (01.01.1997)
Published in Journal of crystal growth (01.01.1997)
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