Suppression of multiple pulse formation in external-cavity mode-locked semiconductor lasers using intrawaveguide saturable absorbers
Derickson, D.J., Helkey, R.J., Mar, A., Karin, J.R., Bowers, J.E., Thornton, R.L.
Published in IEEE photonics technology letters (01.04.1992)
Published in IEEE photonics technology letters (01.04.1992)
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Journal Article
Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes
Bour, D.P., Geels, R.S., Treat, D.W., Paoli, T.L., Ponce, F., Thornton, R.L., Krusor, B.S., Bringans, R.D., Welch, D.F.
Published in IEEE journal of quantum electronics (01.02.1994)
Published in IEEE journal of quantum electronics (01.02.1994)
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Journal Article
Doped contacts for high-longevity optically activated, high gain GaAs photoconductive semiconductor switches
Mar, A., Loubriel, G.M., Zutavern, F.J., O'Malley, M.W., Helgeson, W.D., Brown, D.J., Hjalmarson, H.P., Baca, A.G., Thornton, R.L., Donaldson, R.D.
Published in Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358) (17.12.1999)
Published in Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358) (17.12.1999)
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Conference Proceeding
Drift leakage current in AlGaInP quantum-well lasers
Bour, D.P., Treat, D.W., Thornton, R.L., Geels, R.S., Welch, D.F.
Published in IEEE journal of quantum electronics (01.05.1993)
Published in IEEE journal of quantum electronics (01.05.1993)
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Journal Article
Doped contacts for high-longevity optically activated, high-gain GaAs photoconductive semiconductor switches
Mar, A., Loubriel, G.M., Zutavern, F.J., O'Malley, M.W., Helgeson, W.D., Brown, D.J., Hjalmarson, H.P., Baca, A.G., Thornton, R.L., Donaldson, R.D.
Published in IEEE transactions on plasma science (01.10.2000)
Published in IEEE transactions on plasma science (01.10.2000)
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Journal Article
Independently addressable VCSEL arrays on 3-μm pitch
Chua, C.L., Thornton, R.L., Treat, D.W., Donaldson, R.M.
Published in IEEE photonics technology letters (01.07.1998)
Published in IEEE photonics technology letters (01.07.1998)
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Journal Article
Vertical cavity lasers for printing
Thornton, R.L.
Published in 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application (1997)
Published in 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application (1997)
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Conference Proceeding
Tensile-strained AlGaAsP and InGaAsP-(AlGa)/sub 0.5/In/sub 0.5/P quantum well laser diodes for TM-mode emission in the wavelength range 650 </spl lambda/<850 nm
Bour, D.P., Treat, D.W., Beernink, K.J., Thornton, R.L., Paoli, T.L., Bringans, R.D.
Published in IEEE photonics technology letters (01.11.1994)
Published in IEEE photonics technology letters (01.11.1994)
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Journal Article
Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers
Bour, D.P., Treat, D.W., Thornton, R.L., Bringans, R.D., Paoli, T.L., Geels, R.S., Welch, D.F.
Published in IEEE photonics technology letters (01.10.1992)
Published in IEEE photonics technology letters (01.10.1992)
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Journal Article
Dual-polarization, single quantum-well AlGaInP laser diode structure
Bour, D.P., Beernink, K.J., Treat, D.W., Paoli, T.L., Thornton, R.L.
Published in IEEE journal of quantum electronics (01.12.1994)
Published in IEEE journal of quantum electronics (01.12.1994)
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Journal Article
Low threshold GaxIn1-xP/(AlyGa1-y)0.5In0.5P strained quantum well lasers
BOUR, D. P, TREAT, D. W, THORNTON, R. L, PAOLI, T. L, BRINGANS, R. D, KRUSOR, B. S, GEELS, R. S, WELCH, D. F, WANG, T. Y
Published in Journal of crystal growth (01.11.1992)
Published in Journal of crystal growth (01.11.1992)
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Conference Proceeding
Journal Article
Achievement of high gain in a planar heterojunction bipolar transistor with lateral current flow
Thornton, R.L., Mosby, W.J., Chung, H.F.
Published in IEEE transactions on electron devices (01.11.1989)
Published in IEEE transactions on electron devices (01.11.1989)
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Journal Article