N-face GaN() films grown by group-III-source flow-rate modulation epitaxy
Lin, Chia-Hung, Akasaka, Tetsuya, Yamamoto, Hideki
Published in Japanese Journal of Applied Physics (01.11.2014)
Published in Japanese Journal of Applied Physics (01.11.2014)
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Optical band gap of h-BN epitaxial film grown on c -plane sapphire substrate
Kobayashi, Yasuyuki, Tsai, Chiun-Lung, Akasaka, Tetsuya
Published in Physica status solidi. C (01.07.2010)
Published in Physica status solidi. C (01.07.2010)
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Journal Article
Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
Akasaka, Tetsuya, Kobayashi, Yasuyuki, Kasu, Makoto
Published in Applied physics express (01.09.2009)
Published in Applied physics express (01.09.2009)
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Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
Akasaka, Tetsuya, Kobayashi, Yasuyuki, Kasu, Makoto
Published in Applied physics express (01.07.2010)
Published in Applied physics express (01.07.2010)
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Journal Article
BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire
Akasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Conference Proceeding
Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
Kobayashi, Yasuyuki, Hibino, Hiroki, Nakamura, Tomohiro, Akasaka, Tetsuya, Makimoto, Toshiki, Matsumoto, Nobuo
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
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Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
Kobayashi, Yasuyuki, Akasaka, Tetsuya, Kobayashi, Naoki
Published in Japanese Journal of Applied Physics (15.10.1998)
Published in Japanese Journal of Applied Physics (15.10.1998)
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Journal Article
Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
Gotoh, Hideki, Akasaka, Tetsuya, Tawara, Takehiko, Kobayashi, Yasuyuki, Makimoto, Toshiki, Nakano, Hidetoshi
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
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Current-confining structure of InGaN hexagonal microfacet lasers by selective incorporation of Mg during selective-area MOVPE
Akasaka, Tetsuya, Ando, Seigo, Nishida, Toshio, Saitoh, Tadashi, Kobayashi, Naoki
Published in Journal of crystal growth (01.02.2003)
Published in Journal of crystal growth (01.02.2003)
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Conference Proceeding
In-situ monitoring of GaN MOVPE by shallow-angle reflectance using ultraviolet light
Kobayashi, Yasuyuki, Akasaka, Tetsuya, Kobayashi, Naoki
Published in Journal of crystal growth (01.12.1998)
Published in Journal of crystal growth (01.12.1998)
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Conference Proceeding
Surface supersaturation in flow-rate modulation epitaxy of GaN
Akasaka, Tetsuya, Lin, Chia-Hung, Yamamoto, Hideki, Kumakura, Kazuhide
Published in Journal of crystal growth (15.06.2017)
Published in Journal of crystal growth (15.06.2017)
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