High-temperature operation of gallium oxide memristors up to 600 K
Sato, Kento, Hayashi, Yusuke, Masaoka, Naoki, Tohei, Tetsuya, Sakai, Akira
Published in Scientific reports (30.01.2023)
Published in Scientific reports (30.01.2023)
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Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
Hamachi, Takeaki, Tohei, Tetsuya, Hayashi, Yusuke, Imanishi, Masayuki, Usami, Shigeyoshi, Mori, Yusuke, Sakai, Akira
Published in Scientific reports (10.02.2023)
Published in Scientific reports (10.02.2023)
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Large magnetoelectric coupling in magnetically short-range ordered Bi5Ti3FeO15 film
Zhao, Hongyang, Kimura, Hideo, Cheng, Zhenxiang, Osada, Minoru, Wang, Jianli, Wang, Xiaolin, Dou, Shixue, Liu, Yan, Yu, Jianding, Matsumoto, Takao, Tohei, Tetsuya, Shibata, Naoya, Ikuhara, Yuichi
Published in Scientific reports (11.06.2014)
Published in Scientific reports (11.06.2014)
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Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates
Nakanishi, Yudai, Hayashi, Yusuke, Hamachi, Takeaki, Tohei, Tetsuya, Nakajima, Yoshikata, Xiao, Shiyu, Shojiki, Kanako, Miyake, Hideto, Sakai, Akira
Published in Journal of electronic materials (01.08.2023)
Published in Journal of electronic materials (01.08.2023)
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Inversion domain boundaries in Mn and Al dual‐doped ZnO: Atomic structure and electronic properties
Hoemke, Joshua, Tochigi, Eita, Tohei, Tetsuya, Yoshida, Hidehiro, Shibata, Naoya, Ikuhara, Yuichi, Sakka, Yoshio
Published in Journal of the American Ceramic Society (01.09.2017)
Published in Journal of the American Ceramic Society (01.09.2017)
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Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method
Hamachi, Takeaki, Tohei, Tetsuya, Imanishi, Masayuki, Mori, Yusuke, Sakai, Akira
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Multivariate Statistical Characterization of Charged and Uncharged Domain Walls in Multiferroic Hexagonal YMnO3 Single Crystal Visualized by a Spherical Aberration-Corrected STEM
Matsumoto, Takao, Ishikawa, Ryo, Tohei, Tetsuya, Kimura, Hideo, Yao, Qiwen, Zhao, Hongyang, Wang, Xiaolin, Chen, Dapeng, Cheng, Zhenxiang, Shibata, Naoya, Ikuhara, Yuichi
Published in Nano letters (09.10.2013)
Published in Nano letters (09.10.2013)
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Depth-resolved analysis of lattice distortions in high-Ge-content SiGe/compositionally graded SiGe films using nanobeam x-ray diffraction
Shida, Kazuki, Takeuchi, Shotaro, Tohei, Tetsuya, Imai, Yasuhiko, Kimura, Shigeru, Schulze, Andreas, Caymax, Matty, Sakai, Akira
Published in Semiconductor science and technology (25.10.2018)
Published in Semiconductor science and technology (25.10.2018)
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Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning
Zhang, Zexuan, Hayashi, Yusuke, Tohei, Tetsuya, Sakai, Akira, Protasenko, Vladimir, Singhal, Jashan, Miyake, Hideto, Xing, Huili Grace, Jena, Debdeep, Cho, YongJin
Published in Science advances (09.09.2022)
Published in Science advances (09.09.2022)
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