A New 200 V Dual Trench MOSFET With Stepped Oxide for Ultra Low RDS(on)
Park, Chanho, Azam, Misbah, Dengel, Gabriel, Shibib, Ayman, Terrill, Kyle
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
60 V rating split gate trench MOSFETs having best-in-class specific resistance and figure-of-merit
Chanho Park, Havanur, Sanjay, Shibib, Ayman, Terrill, Kyle
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
Effect of device layout on the switching of enhancement mode GaN HEMTs
Efthymiou, Loizos, Camuso, Gianluca, Longobardi, Giorgia, Udrea, Florin, Chien, Terry, Chen, Max, Shibib, Ayman, Terrill, Kyle
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding