Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature
Iwata, Takashi, Matsumoto, Taketoshi, Terakawa, Sumio, Kobayashi, Hikaru
Published in Central European journal of physics (01.12.2010)
Published in Central European journal of physics (01.12.2010)
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Journal Article
Submicrometer Ultralow-Power TFT With 1.8 nm NAOS SiO2/20 nm CVD SiO2 Gate Stack Structure
KUBOTA, Yasushi, MATSUMOTO, Taketoshi, IMAI, Shigeki, YAMADA, Mikihiro, TSUJI, Hiroshi, TANIGUCHI, Kenji, TERAKAWA, Sumio, KOBAYASHI, Hikaru
Published in IEEE transactions on electron devices (01.04.2011)
Published in IEEE transactions on electron devices (01.04.2011)
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Journal Article
Evaluation of Radiation Damage on Electrical Characteristics of SiO 2 due to Reactive Ion Etching
Tsukamoto, Akira, Mizushima, Kazuyoshi, Hidaka, Yoshiharu, Hiroyuki Okada, Hiroyuki Okada, Sumio Terakawa, Sumio Terakawa
Published in Japanese Journal of Applied Physics (01.06.1993)
Published in Japanese Journal of Applied Physics (01.06.1993)
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Journal Article
Evaluation of radiation damage on electrical characteristics of SiO2 due to reactive ion etching
TSUKAMOTO, A, MIZUSHIMA, K, HIDAKA, Y, OKADA, H, TERAKAWA, S
Published in Japanese journal of applied physics (01.06.1993)
Published in Japanese journal of applied physics (01.06.1993)
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Conference Proceeding
Submicrometer Ultralow-Power TFT With 1.8 nm NAOS hbox SiO 2 / hbox 20 Unknown character hbox nm CVD hbox SiO 2 Gate Stack Structure
Kubota, Yasushi, Matsumoto, Taketoshi, Imai, Shigeki, Yamada, Mikihiro, Tsuji, Hiroshi, Taniguchi, Kenji, Terakawa, Sumio, Kobayashi, Hikaru
Published in IEEE transactions on electron devices (01.04.2011)
Published in IEEE transactions on electron devices (01.04.2011)
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Journal Article
Submicrometer Ultralow-Power TFT With 1.8 nm NAOS [Formula Omitted] CVD [Formula Omitted] Gate Stack Structure
Kubota, Yasushi, Matsumoto, Taketoshi, Imai, Shigeki, Yamada, Mikihiro, Tsuji, Hiroshi, Taniguchi, Kenji, Terakawa, Sumio, Kobayashi, Hikaru
Published in IEEE transactions on electron devices (01.04.2011)
Published in IEEE transactions on electron devices (01.04.2011)
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Journal Article
Ultralow-Power TFT With Gate Oxide Fabricated by Nitric Acid Oxidation Method
Matsumoto, Taketoshi, Kubota, Yasushi, Yamada, Mikihiro, Tsuji, Hiroshi, Shimatani, Takafumi, Hirayama, Yasuhiro, Terakawa, Sumio, Imai, Shigeki, Kobayashi, Hikaru
Published in IEEE electron device letters (01.08.2010)
Published in IEEE electron device letters (01.08.2010)
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Journal Article
Nitric acid oxidation method to form SiO 2/3C–SiC structure at 120 °C
Im, Sung-Soon, Terakawa, Sumio, Iwasa, Hitoo, Kobayashi, Hikaru
Published in Applied surface science (15.04.2008)
Published in Applied surface science (15.04.2008)
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Journal Article
Nitric acid oxidation method to form SiO2/3C-SiC structure at 120 deg C
Im, Sung-Soon, Terakawa, Sumio, Iwasa, Hitoo, Kobayashi, Hikaru
Published in Applied surface science (15.04.2008)
Published in Applied surface science (15.04.2008)
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Journal Article
Submicrometer Ultralow-Power TFT With 1.8 nm NAOS \hbox/\hbox \ \hbox CVD \hbox Gate Stack Structure
Kubota, Y, Matsumoto, T, Imai, S, Yamada, M, Tsuji, H, Taniguchi, K, Terakawa, S, Kobayashi, H
Published in IEEE transactions on electron devices (01.04.2011)
Published in IEEE transactions on electron devices (01.04.2011)
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Journal Article
Nitric acid oxidation method to form SiO2/3C-SiC structure at 120 °C
IM, Sung-Soon, TERAKAWA, Sumio, IWASA, Hitoo, KOBAYASHI, Hikaru
Published in Applied surface science (01.04.2008)
Published in Applied surface science (01.04.2008)
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Conference Proceeding
Journal Article