The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation
Liu, Jheng-Jie, Ho, Wen-Jeng, Chen, June-Yan, Lin, Jian-Nan, Teng, Chi-Jen, Yu, Chia-Chun, Li, Yen-Chu, Chang, Ming-Jui
Published in Sensors (Basel, Switzerland) (02.08.2019)
Published in Sensors (Basel, Switzerland) (02.08.2019)
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Journal Article
Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps
Liu, Jheng-Jie, Ho, Wen-Jeng, Chiang, Cho-Chun, Teng, Chi-Jen, Yu, Chia-Chun, Li, Yen-Chu
Published in Sensors (Basel, Switzerland) (25.08.2018)
Published in Sensors (Basel, Switzerland) (25.08.2018)
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Journal Article
High-Speed 1550-nm Avalanche Photodiode Based on InAlAs-Multiplicaltion and Mesa-Structure
Lin, Po-Ju, Ho, Wen-Jeng, Liu, Jheng-Jie, Teng, Chi-Jen, Yu, Chia-Chun, Li, Yen-Chu
Published in 2020 Opto-Electronics and Communications Conference (OECC) (04.10.2020)
Published in 2020 Opto-Electronics and Communications Conference (OECC) (04.10.2020)
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Conference Proceeding
Performance characterization of top-illuminate high-speed mesa-type InAlAs/InGaAs APD based on various dimensions of mesa active area
Ding, Po-Yuan, Ho, Wen-Jeng, Liu, Jheng-Jie, Teng, Chi-Jen, Yu, Chia-Chun, Li, Yen-Chu
Published in 2020 Opto-Electronics and Communications Conference (OECC) (04.10.2020)
Published in 2020 Opto-Electronics and Communications Conference (OECC) (04.10.2020)
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Conference Proceeding