Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers
Blumberg, C, Liborius, L, Ackermann, J, Tegude, F.-J, Poloczek, A, Prost, W, Weimann, N
Published in CrystEngComm (21.02.2020)
Published in CrystEngComm (21.02.2020)
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Journal Article
Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor–liquid–solid grown GaAs nanowires
Regolin, I., Gutsche, C., Lysov, A., Blekker, K., Li, Zi-An, Spasova, M., Prost, W., Tegude, F.-J.
Published in Journal of crystal growth (01.01.2011)
Published in Journal of crystal growth (01.01.2011)
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Journal Article
Conference Proceeding
High Transconductance MISFET With a Single InAs Nanowire Channel
Do, Q.-T., Blekker, K., Regolin, I., Prost, W., Tegude, F.J.
Published in IEEE electron device letters (01.08.2007)
Published in IEEE electron device letters (01.08.2007)
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Journal Article
Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAs
Regolin, I., Sudfeld, D., Lüttjohann, S., Khorenko, V., Prost, W., Kästner, J., Dumpich, G., Meier, C., Lorke, A., Tegude, F.-J.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Conference Proceeding
Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures
Lysov, A, Offer, M, Gutsche, C, Regolin, I, Topaloglu, S, Geller, M, Prost, W, Tegude, F-J
Published in Nanotechnology (25.02.2011)
Published in Nanotechnology (25.02.2011)
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Journal Article
A precise optical determination of nanoscale diameters of semiconductor nanowires
Brönstrup, G, Leiterer, C, Jahr, N, Gutsche, C, Lysov, A, Regolin, I, Prost, W, Tegude, F J, Fritzsche, W, Christiansen, S
Published in Nanotechnology (23.09.2011)
Published in Nanotechnology (23.09.2011)
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Journal Article
Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy
Vinaji, S, Lochthofen, A, Mertin, W, Regolin, I, Gutsche, C, Prost, W, Tegude, F J, Bacher, G
Published in Nanotechnology (23.09.2009)
Published in Nanotechnology (23.09.2009)
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Journal Article
Passivation of InP-based HBTs
Jin, Z., Uchida, K., Nozaki, S., Prost, W., Tegude, F.-J.
Published in Applied surface science (31.08.2006)
Published in Applied surface science (31.08.2006)
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Conference Proceeding
Threshold logic circuit design of parallel adders using resonant tunneling devices
Pacha, C., Auer, U., Burwick, C., Glosekotter, P., Brennemann, A., Prost, W., Tegude, F.-J., Goser, K.F.
Published in IEEE transactions on very large scale integration (VLSI) systems (01.10.2000)
Published in IEEE transactions on very large scale integration (VLSI) systems (01.10.2000)
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Journal Article
Conference Proceeding
Surface recombination mechanism in graded-base InGaAs-InP HBTs
Jin, Z., Neumann, S., Prost, W., Tegude, F.-J.
Published in IEEE transactions on electron devices (01.06.2004)
Published in IEEE transactions on electron devices (01.06.2004)
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Journal Article
Scalable Electrical Properties of Axial GaAs Nanowire pn-Diodes
Gutsche, C., Lysov, A., Regolin, I., Münstermann, B., Prost, W., Tegude, F. J.
Published in Journal of electronic materials (01.05.2012)
Published in Journal of electronic materials (01.05.2012)
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Journal Article
Conference Proceeding
High performance III/V RTD and PIN diode on a silicon (001) substrate
Prost, W., Khorenko, V., Mofor, A.-C., Neumann, S., Poloczek, A., Matiss, A., Bakin, A., Schlachetzki, A., Tegude, F.-J.
Published in Applied physics. A, Materials science & processing (01.06.2007)
Published in Applied physics. A, Materials science & processing (01.06.2007)
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Journal Article
Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes
Auer, U., Prost, W., Agethen, M., Tegude, F.-J., Duschl, R., Eberl, K.
Published in IEEE electron device letters (01.05.2001)
Published in IEEE electron device letters (01.05.2001)
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Journal Article
Growth and characterization of InAlP/InGaAs double barrier RTDs
Neumann, S., Velling, P., Prost, W., Tegude, F.-J.
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
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Conference Proceeding
Gold catalyst initiated growth of GaN nanowires by MOCVD
Ahl, J.-P., Behmenburg, H., Giesen, C., Regolin, I., Prost, W., Tegude, F. J., Radnoczi, G. Z., Pécz, B., Kalisch, H., Jansen, R. H., Heuken, M.
Published in Physica status solidi. C (01.07.2011)
Published in Physica status solidi. C (01.07.2011)
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