Effects of interface properties in SiC MOSFETs on reliability
Mori, Y., Hisamoto, D., Tega, N., Matsumura, M., Yoshimoto, H., Shima, A., Shimamoto, Y.
Published in 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.06.2015)
Published in 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.06.2015)
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3.3 kV 4H-SiC DMOSFET with highly reliable gate insulator and body diode
Shima, A., Shimizu, H., Mori, Y., Sagawa, M., Konishi, K., Fujita, R., Ishigaki, T., Tega, N., Kobayashi, K., Sato, S., Shimamoto, Y.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Journal Article
Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm
Tega, N., Miki, H., Pagette, F., Frank, D.J., Ray, A., Rooks, M.J., Haensch, W., Torii, K.
Published in 2009 Symposium on VLSI Technology (01.06.2009)
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Published in 2009 Symposium on VLSI Technology (01.06.2009)
Conference Proceeding
Reduction of random telegraph noise in High-к / metal-gate stacks for 22 nm generation FETs
Tega, N., Miki, H., Ren, Z., D'Emic, C.P., Zhu, Y., Frank, D.J., Cai, J., Guillorn, M.A., Park, D.-G., Haensch, W., Torii, K.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
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Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM
Tega, N., Miki, H., Yamaoka, M., Kume, H., Toshiyuki Mine, Ishida, T., Yuki Mori, Yamada, R., Kazuyoshi Torii
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
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Understanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETs
Miki, H., Yamaoka, M., Tega, N., Ren, Z., Kobayashi, M., D'Emic, C. P., Zhu, Y., Frank, D. J., Guillorn, M. A., Park, D., Haensch, W., Torii, K.
Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
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Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
Conference Proceeding
Quantitative Analysis of Random Telegraph Signals as Fluctuations of Threshold Voltages in Scaled Flash Memory Cells
Miki, H., Osabe, T., Tega, N., Kotabe, A., Kurata, H., Tokami, K., Ikeda, Y., Kamohara, S., Yamada, R.
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
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Impact of HK / MG stacks and future device scaling on RTN
Tega, N, Miki, H, Zhibin Ren, D'Emic, C P, Yu Zhu, Frank, D J, Guillorn, M A, Dae-Gyu Park, Haensch, W, Torii, K
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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A new insight into the dynamic fluctuation mechanism of stress-induced leakage current
Ishida, T., Tega, N., Mori, Y., Miki, H., Mine, T., Kume, H., Torii, K., Muraguchi, M., Takada, Y., Shiraishi, K., Yamada, R.
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
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Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs
Miki, H., Tega, N., Yamaoka, M., Frank, D. J., Bansal, A., Kobayashi, M., Cheng, K., D'Emic, C. P., Ren, Z., Wu, S., Yau, J., Zhu, Y., Guillorn, M. A., Park, D., Haensch, W., Leobandung, E., Torii, K.
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
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Anomalously Large Threshold Voltage Fluctuation by Complex Random Telegraph Signal in Floating Gate Flash Memory
Tega, N., Miki, H., Osabe, T., Kotabe, A., Otsuga, K., Kurata, H., Kamohara, S., Tokami, K., Ikeda, Y., Yamada, R.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Hysteretic drain-current behavior due to random telegraph noise in Scaled-down FETs with high-κ/metal-gate stacks
Miki, H, Tega, N, Zhibin Ren, D'Emic, C P, Yu Zhu, Frank, D J, Guillorn, M A, Dae-Gyu Park, Haensch, W, Torii, K
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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