Carrier and heat transport properties of poly-crystalline GeSn films for thin-film transistor applications
Uchida, Noriyuki, Hattori, Junichi, Lieten, Ruben R., Ohishi, Yuji, Takase, Ryohei, Ishimaru, Manabu, Fukuda, Koichi, Maeda, Tatsuro, Locquet, Jean-Pierre
Published in Journal of applied physics (14.10.2019)
Published in Journal of applied physics (14.10.2019)
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Journal Article
Highly strained and heavily doped germanium thin films by non-equilibrium high-speed CW laser annealing for optoelectronic applications
Saputro, Rahmat Hadi, Maeda, Tatsuro, Matsumura, Ryo, Fukata, Naoki
Published in Materials science in semiconductor processing (01.08.2023)
Published in Materials science in semiconductor processing (01.08.2023)
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Journal Article
Analysis of square-law detector for high-sensitive detection of terahertz waves
Kojima, Hiromu, Kido, Daishi, Kanaya, Haruichi, Ishii, Hiroyuki, Maeda, Tatsuro, Ogura, Mutsuo, Asano, Tanemasa
Published in Journal of applied physics (07.05.2019)
Published in Journal of applied physics (07.05.2019)
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Journal Article
Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations
Takase, Ryohei, Ishimaru, Manabu, Uchida, Noriyuki, Maeda, Tatsuro, Sato, Kazuhisa, Lieten, Ruben R., Locquet, Jean-Pierre
Published in Journal of applied physics (28.12.2016)
Published in Journal of applied physics (28.12.2016)
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Journal Article
Physical Mechanisms of Mobility Enhancement in Ultrathin Body GeOI pMOSFETs Fabricated by HEtero-Layer-Lift-Off Technology
Chang, Wen Hsin, Irisawa, Toshifumi, Ishii, Hiroyuki, Uchida, Noriyuki, Maeda, Tatsuro
Published in IEEE transactions on electron devices (01.03.2019)
Published in IEEE transactions on electron devices (01.03.2019)
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Journal Article
Optical study of electron and acoustic phonon confinement in ultrathin-body germanium-on-insulator nanolayers
Poborchii, Vladimir, Groenen, Jesse, Geshev, Pavel I, Hattori, Junichi, Chang, Wen Hsin, Ishii, Hiroyuki, Irisawa, Toshifumi, Maeda, Tatsuro
Published in Nanoscale (03.06.2021)
Published in Nanoscale (03.06.2021)
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Journal Article
First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs
Wen Hsin Chang, Irisawa, Toshifumi, Ishii, Hiroyuki, Hattori, Hiroyuki, Ota, Hiroyuki, Takagi, Hideki, Kurashima, Yuichi, Uchida, Noriyuki, Maeda, Tatsuro
Published in IEEE transactions on electron devices (01.11.2017)
Published in IEEE transactions on electron devices (01.11.2017)
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Journal Article
Spectral Responsivity Characteristics of Front‐Side Illumination InGaAs PhotoFETs on Si
Oishi, Kazuaki, Ishii, Hiroyuki, Chang, Wen Hsin, Ishii, Hiroto, Endoh, Akira, Fujishiro, Hiroki, Maeda, Tatsuro
Published in Physica status solidi. A, Applications and materials science (01.02.2021)
Published in Physica status solidi. A, Applications and materials science (01.02.2021)
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Journal Article
(Invited) Epitaxial Growth of Ge/III-V Films and Hetero-Layer Lift-off for Ultra-Thin GeOI Fabrication
Maeda, Tatsuro, Irisawa, Toshifumi, Ishii, Hiroyuki, Chang, Wen Hsin
Published in ECS transactions (08.09.2020)
Published in ECS transactions (08.09.2020)
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Journal Article
Ultra-thin germanium-tin on insulator structure through direct bonding technique
Maeda, Tatsuro, Chang, Wen Hsin, Irisawa, Toshifumi, Ishii, Hiroyuki, Oka, Hiroshi, Kurosawa, Masashi, Imai, Yukihiro, Nakatsuka, Osamu, Uchida, Noriyuki
Published in Semiconductor science and technology (24.10.2018)
Published in Semiconductor science and technology (24.10.2018)
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Journal Article
Si1−xGex bulk single crystals for substrates of electronic devices
Kinoshita, Kyoichi, Arai, Yasutomo, Maeda, Tatsuro, Nakatsuka, Osamu
Published in Materials science in semiconductor processing (01.11.2017)
Published in Materials science in semiconductor processing (01.11.2017)
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Journal Article
Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure
Chang, Wen Hsin, Wan, Hsien-Wen, Cheng, Yi-Ting, Lin, Yen-Hsun G., Irisawa, Toshifumi, Ishii, Hiroyuki, Kwo, Jueinai, Hong, Minghwei, Maeda, Tatsuro
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
InGaAs photo field-effect-transistors (PhotoFETs) on half-inch Si wafer using layer transfer technology
Maeda, Tatsuro, Ishii, Hiroyuki, Chang, Wen Hsin, Shimizu, Tetsuji, Ishii, Hiroto, Ohishi, Kazuaki, Endoh, Akira, Fujishiro, Hiroki
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
(Invited) Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform
Chang, Wen Hsin, Hong, T.-Z., Sung, P.-J., Irisawa, Toshifumi, Ishii, Hiroyuki, Lee, Y.-J., Maeda, Tatsuro
Published in ECS transactions (07.05.2021)
Published in ECS transactions (07.05.2021)
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Journal Article
Interlayer coupling effect on the performance of monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness
Hattori, Junichi, Fukuda, Koichi, Irisawa, Toshifumi, Ota, Hiroyuki, Maeda, Tatsuro
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
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Journal Article
Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties
Suzuki, Rena, Taoka, Noriyuki, Yokoyama, Masafumi, Kim, Sang-Hyeon, Hoshii, Takuya, Maeda, Tatsuro, Yasuda, Tetsuji, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi
Published in Journal of applied physics (15.10.2012)
Published in Journal of applied physics (15.10.2012)
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