Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO2 interface
Kaneko, Tomoaki, Tajima, Nobuo, Yamasaki, Takahiro, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa
Published in Applied physics express (01.01.2018)
Published in Applied physics express (01.01.2018)
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Electrical Properties and Thermodynamic Stability of Sr(Ti 1-x ,Ru x )O 3 Thin Films Deposited by Inductive-Coupling-Plasma-Induced RF Magnetron Sputtering
Ryoichi Ohara, Ryoichi Ohara, Tatsuo Schimizu, Tatsuo Schimizu, Kenya Sano, Kenya Sano, Masahiko Yoshiki, Masahiko Yoshiki, Takashi Kawakubo, Takashi Kawakubo
Published in Japanese Journal of Applied Physics (01.03.2001)
Published in Japanese Journal of Applied Physics (01.03.2001)
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Tensile Strain in Si Due to Expansion of Lattice Spacings in CeO[sub 2] Epitaxially Grown on Si(111)
Nishikawa, Yukie, Matsushita, Daisuke, Satou, Nobutaka, Yoshiki, Masahiko, Schimizu, Tatsuo, Yamaguchi, Takeshi, Satake, Hideki, Fukushima, Noburu
Published in Journal of the Electrochemical Society (2004)
Published in Journal of the Electrochemical Society (2004)
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Control of electronic properties of HfO2 with fluorine doping from first-principles
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Conference Proceeding
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ELECTRICAL PROPERTIES AND THERMODYNAMIC STABILITY OF Sr(Ti1-x,Rux)O3 THIN FILMS DEPOSITED BY INDUCTIVE-COUPLING-PLASMA-INDUCED RF MAGNETRON SPUTTERING
Ohara, R, Schimizu, T, Sano, K, Yoshiki, M, Kawakubo, T
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 3A, pp. 1384-1387. 2001 (2001)
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 3A, pp. 1384-1387. 2001 (2001)
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First-principles study on C=C defects near SiC/SiO2 interface: Defect passivation by double-bond saturation
Tajima, Nobuo, Kaneko, Tomoaki, Yamasaki, Takahiro, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
First-principles modeling of defect-free abrupt SiC/SiO2 interfaces on a- and m-face 4H-SiC
Kaneko, Tomoaki, Tajima, Nobuo, Yamasaki, Takahiro, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa
Published in Applied physics express (01.10.2018)
Published in Applied physics express (01.10.2018)
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4H-SiC Surface Structures and Oxidation Mechanism Revealed by Using First-Principles and Classical Molecular Dynamics Simulations
Yamasaki, Takahiro, Tajima, Nobuo, Nishikawa, Nobutaka, Nara, Jun, Kaneko, Tomoaki, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO 2 interface
Kaneko, Tomoaki, Tajima, Nobuo, Yamasaki, Takahiro, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa
Published in Applied physics express (01.01.2018)
Published in Applied physics express (01.01.2018)
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Journal Article
First-principles study on C=C defects near SiC/SiO^sub 2^ interface: Defect passivation by double-bond saturation
Tajima, Nobuo, Kaneko, Tomoaki, Yamasaki, Takahiro, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa
Published in Japanese Journal of Applied Physics (01.04.2018)
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Published in Japanese Journal of Applied Physics (01.04.2018)
Journal Article
First-principles study on C=C defects near SiC/SiO 2 interface: Defect passivation by double-bond saturation
Tajima, Nobuo, Kaneko, Tomoaki, Yamasaki, Takahiro, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Microscopic theory of light emission from the scanning tunneling microscope
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Conference Proceeding
Theory of Scanning Tunneling Microscopy/Spectroscopy for Adsorbed Surfaces and Layer Crystal Surfaces
Tsukada, Masaru, Schimizu, Tatsuo, Watanabe, Satoshi, Isshiki, Nobuyuki, Katsuyoshi Kobayashi, Katsuyoshi Kobayashi
Published in Japanese Journal of Applied Physics (01.03.1993)
Published in Japanese Journal of Applied Physics (01.03.1993)
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