Embedded ferroelectric memory technology with completely encapsulated hydrogen barrier structure
Nagano, Y., Mikawa, T., Kutsunai, T., Natsume, S., Tatsunari, T., Ito, T., Noma, A., Nasu, T., Hayashi, S., Hirano, H., Gohou, Y., Judai, Y., Fujii, E.
Published in IEEE transactions on semiconductor manufacturing (01.02.2005)
Published in IEEE transactions on semiconductor manufacturing (01.02.2005)
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Journal Article
0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V
Nagano, Y., Mikawa, T., Kutsunai, T., Hayashi, S., Nasu, T., Natsume, S., Tatsunari, T., Ito, T., Goto, S., Yano, H., Noma, A., Nagahashi, K., Miki, T., Sakagami, M., Izutsu, Y., Nakakuma, T., Hirano, H., Iwanari, S., Murakuki, Y., Yamaoka, K., Goho, Y., Judai, Y., Fujii, E., Sato, K.
Published in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (2003)
Published in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (2003)
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Conference Proceeding