Modeling of direct tunneling current through gate dielectric stacks
Mudanai, S., Yang-Yu Fan, Qiqing Ouyang, Tasch, A.F., Banerjee, S.K.
Published in IEEE transactions on electron devices (01.10.2000)
Published in IEEE transactions on electron devices (01.10.2000)
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Journal Article
A detailed physical model for ion implant induced damage in silicon
Tian, S., Morris, M.F., Morris, S.J., Obradovic, B., Geng Wang, Tasch, A.F., Snell, C.M.
Published in IEEE transactions on electron devices (01.06.1998)
Published in IEEE transactions on electron devices (01.06.1998)
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Journal Article
Computationally efficient models for quantization effects in MOS electron and hole accumulation layers
Hareland, S.A., Manassian, M., Shih, W.-K., Jallepalli, S., Wang, H., Chindalore, G.L., Tasch, Al.F., Maziar, C.M.
Published in IEEE transactions on electron devices (01.07.1998)
Published in IEEE transactions on electron devices (01.07.1998)
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Journal Article
A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current
Qiqing Ouyang, Xiangdong Chen, Mudanai, S.P., Xin Wang, Kencke, D.L., Tasch, A.F., Register, L.F., Banerjee, S.K.
Published in IEEE transactions on electron devices (01.10.2000)
Published in IEEE transactions on electron devices (01.10.2000)
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Journal Article
A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures
Li, Di, Wang, Geng, Chen, Yang, Lin, Li, Shrivastav, Gaurav, Oak, Stimit, Tasch, Al F, Banerjee, Sanjay K
Published in Journal of computational electronics (01.10.2002)
Published in Journal of computational electronics (01.10.2002)
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Journal Article
Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas
Chen, Yang, Li, Di, Wang, Geng, Lin, Li, Oak, Stimit, Shrivastav, Gaurav, Tasch, Al F, Banerjee, Sanjay K
Published in Journal of computational electronics (01.07.2002)
Published in Journal of computational electronics (01.07.2002)
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Journal Article
A physically-based model for quantization effects in hole inversion layers
Hareland, S.A., Jallepalli, S., Wei-Kai Shih, Haihong Wang, Chindalore, G.L., Tasch, A.F., Maziar, C.M.
Published in IEEE transactions on electron devices (01.01.1998)
Published in IEEE transactions on electron devices (01.01.1998)
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Journal Article
Hydrodynamic (HD) simulation of N-channel MOSFET's with a computationally efficient inversion layer quantization model
Wang, Haihong, Shih, Wei-Kai, Green, Susan, Hareland, Scott, Maziar, Christine M, Tasch, Al F
Published in VLSI design (Yverdon, Switzerland) (01.01.1998)
Published in VLSI design (Yverdon, Switzerland) (01.01.1998)
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Journal Article
Study of electron velocity overshoot in nMOS inversion layers
Shih, Wei-Kai, Jallepalli, Srinivas, Rashed, Mahbub, Maziar, Christine M, Tasch, Al F
Published in VLSI design (Yverdon, Switzerland) (01.01.1998)
Published in VLSI design (Yverdon, Switzerland) (01.01.1998)
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Journal Article
Challenges in achieving sub-100 nm MOSFETs
Tasch, Al F
Published in Proceedings - International Conference on Wafer Scale Integration (01.01.1997)
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Published in Proceedings - International Conference on Wafer Scale Integration (01.01.1997)
Journal Article
Growth of polycrystalline calcium fluoride via low-temperature organometallic chemical vapor deposition
Benac, Michael J, Cowley, Alan H, Jones, Richard A, Tasch, Al F
Published in Chemistry of materials (01.05.1989)
Published in Chemistry of materials (01.05.1989)
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Journal Article
Knowledge and technology transfer: a university experience and perspective
Tasch, Al F
Published in Proceedings - University/Government/Industry Microelectronics Symposium (01.01.1995)
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Published in Proceedings - University/Government/Industry Microelectronics Symposium (01.01.1995)
Journal Article
An Improved Approach to Accurately Model Shallow B and BF 2 Implants in Silicon
Tasch, Al F., Shin, H., Park, C., Alvis, J., Novak, S.
Published in Journal of the Electrochemical Society (01.03.1989)
Published in Journal of the Electrochemical Society (01.03.1989)
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Journal Article
A universal ion implantation model for all species into single-crystal silicon
Yang Chen, Geng Wang, Di Li, Oak, S.K., Shrivastav, G., Rubin, L., Tasch, A.F., Banerjee, S.K.
Published in IEEE transactions on electron devices (01.09.2002)
Published in IEEE transactions on electron devices (01.09.2002)
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Journal Article
An improved approach to accurately model shallow B and BF2 implants in silicon
TASCH, A. F, SHIN, H, PARK, C, ALVIS, J, NOVAK, S
Published in Journal of the Electrochemical Society (01.03.1989)
Published in Journal of the Electrochemical Society (01.03.1989)
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Journal Article