Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements
Karboyan, S., Tartarin, J.G., Rzin, M., Brunel, L., Curutchet, A., Malbert, N., Labat, N., Carisetti, D., Lambert, B., Mermoux, M., Romain-Latu, E., Thomas, F., Bouexière, C., Moreau, C.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Journal Article
Conference Proceeding
X-band and K-band low-phase-noise VCOs using SiGe BiCMOS technology
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Journal Article
Conference Proceeding
Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications
Said, N., Harrouche, K., Medjdoub, F., Labat, N., Tartarin, J.G., Malbert, N.
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Noise characteristics of AlInN/GaN HEMTs at microwave frequencies
Nsele, S. D., Escotte, L., Tartarin, J.-G, Piotrowicz, S.
Published in 2013 22nd International Conference on Noise and Fluctuations (ICNF) (01.06.2013)
Published in 2013 22nd International Conference on Noise and Fluctuations (ICNF) (01.06.2013)
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Conference Proceeding
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors
Borgarino, M., Tartarin, J.G., Kuchenbecker, J., Parra, T., Lafontaine, H., Kovacic, T., Plana, R., Graffeuil, J.
Published in IEEE microwave and guided wave letters (01.11.2000)
Published in IEEE microwave and guided wave letters (01.11.2000)
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Journal Article
Impact of RF stress on different topologies of 100 nm X-band robust GaN LNA
Pinault, B., Tartarin, J.G., Saugnon, D., Leblanc, R.
Published in Microelectronics and reliability (01.11.2023)
Published in Microelectronics and reliability (01.11.2023)
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Journal Article
Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations
Tartarin, J.G., Lazar, O., Rumeau, A., Franc, B., Bary, L., Lambert, B.
Published in Microelectronics and reliability (01.11.2020)
Published in Microelectronics and reliability (01.11.2020)
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Journal Article
InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performances
Nsele, S. D., Tartarin, J. G., Escotte, L., Piotrowicz, S., Delage, S.
Published in 2015 International Conference on Noise and Fluctuations (ICNF) (01.06.2015)
Published in 2015 International Conference on Noise and Fluctuations (ICNF) (01.06.2015)
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Conference Proceeding
Low frequency and linear high frequency noise performances of AlGaN/GaN grown on SiC substrate
Tartarin, J.-G., Soubercaze-Pun, G., Bary, L., Chambon, C., Gribaldo, S., Llopis, O., Escotte, L., Plana, R., Delage, S., Gaquiere, C., Graffeuil, J.
Published in European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005 (2005)
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Published in European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005 (2005)
Conference Proceeding
Ka-band low noise amplifiers based on InAlN/GaN technologies
Nsele, S. D., Robin, C., Tartarin, J. G., Escotte, L., Piotrowicz, S., Jardel, O., Delage, S.
Published in 2015 International Conference on Noise and Fluctuations (ICNF) (01.06.2015)
Published in 2015 International Conference on Noise and Fluctuations (ICNF) (01.06.2015)
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Conference Proceeding
Microwave noise parameters of pseudomorphic GaInAs HEMTs under optical illumination
Escotte, L., Grenier, K., Tartarin, J.G., Graffeuil, J.
Published in IEEE transactions on microwave theory and techniques (01.11.1998)
Published in IEEE transactions on microwave theory and techniques (01.11.1998)
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Journal Article
Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging
Tartarin, J.G., Lazar, O., Saugnon, D., Lambert, B., Moreau, C., Bouexiere, C., Romain-Latu, E., Rousseau, K., David, A., Roux, J.L.
Published in Microelectronics and reliability (01.09.2017)
Published in Microelectronics and reliability (01.09.2017)
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Journal Article
Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies
Lazăr, O., Tartarin, J.G., Lambert, B., Moreau, C., Roux, J.L.
Published in Microelectronics and reliability (01.08.2015)
Published in Microelectronics and reliability (01.08.2015)
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Journal Article
High-frequency noise in heterojunction bipolar transistors
Escotte, L., Tartarin, J.G., Plana, R., Graffeuil, J.
Published in Solid-state electronics (01.04.1998)
Published in Solid-state electronics (01.04.1998)
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Journal Article
Assessing Zener-Diode-Structure Reliability From Zener Diodes' Low-Frequency Noise
Graffeuil, J., Bary, L., Rayssac, J., Tartarin, J.-G., Lopez, L.
Published in IEEE transactions on device and materials reliability (01.09.2007)
Published in IEEE transactions on device and materials reliability (01.09.2007)
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Magazine Article
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test
Lambert, B., Labat, N., Carisetti, D., Karboyan, S., Tartarin, J.G., Thorpe, J., Brunel, L., Curutchet, A., Malbert, N., Latu-Romain, E., Mermoux, M.
Published in Microelectronics and reliability (01.09.2012)
Published in Microelectronics and reliability (01.09.2012)
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Journal Article