On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Voronenkov, V. V., Rebane, Yu. T., Zubrilov, A. S., Gorbunov, R. I., Latyshev, P. E., Bochkareva, N. I., Lelikov, Yu. S., Tarhin, D. V., Smirnov, A. N., Davydov, V. Yu, Shreter, Yu. G.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
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